BCP68_09

UNISONIC TECHNOLOGIES CO., LTD BCP68 NPN MEDIUM POWER TRANSISTOR NPN SILICON TRANSISTOR FEATURES * High current (max. 1 A) * Low voltage (max. 20 V). * Complementary to UTC BCP69 1 SOT-223 APPLICATIONS * General purpose switching and amplification under high current conditions. Lead-free: BCP68L Halogen-free: BCP68G ORDERING INFORMATION Normal BCP68-xx-AA3-R Ordering Number Lead Free Plating BCP68L-xx-AA3-R Halogen Free BCP68G-xx-AA3-R Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R207-008,D BCP68 PARAMETER Collector-Base Voltage (Open Emitter) Collector-Emitter Voltage (Open Base) Emitter-Base Voltage (Open Collector) NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified) SYMBOL RATINGS UNIT VCBO 32 V VCEO 20 V VEBO 5 V DC IC 1 A Collector Current 2 A Peak ICM Peak Base Current IBM 200 mA Total Power Dissipation (Ta ≤ 25℃) PD 1.35 W Junction Temperature TJ 150 ℃ Operating Temperature TOPR -45 ~ +150 ℃ Storage Temperature TSTG -65 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance From Junction To Ambient SYMBOL θJA RATINGS 91 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified.) PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Capacitance Transition Frequency DC Current Gain Ratio of the Complementary Pairs SYMBOL TEST CONDITIONS VCE(SAT) IC = 1A, IB =100mA IC = 5mA, VCE = 10V VBE IC = 1A, VCE = 1V IE = 0, VCB = 25V ICBO IE = 0, VCB = 25V, TJ = 150℃ IEBO IC = 0, VEB = 5V IC = 5mA, VCE = 10V hFE IC = 500mA, VCE = 1V IC = 1A, VCE = 1V CC IE = ie = 0, VCB = 5V, f = 1MHz fT IC = -10mA, VCE = -5V, f = 100MHz hFE1 |IC| = 0.5A, |VCE| = 1V hFE2 MIN TYP MAX UNIT 500 mV 620 mV 1 V 100 nA 10 µA 100 nA 375 48 40 1.6 pF MHz 50 85 60 CLASSIFICATION OF hFE RANK RANGE 16 100~250 25 160~375 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R207-008,D BCP68 TYPICAL CHARACTERISTIC 300 250 NPN SILICON TRANSISTOR DC Current Gain (Typical Values) VCE = 1V 200 hFE 150 100 50 0 -10-1 1 10 IC (mA) 102 103 104 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R207-008,D