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BCP69-25-AA3-C-R

BCP69-25-AA3-C-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    BCP69-25-AA3-C-R - NPN GENERAL PURPOSE AMPLIFIER - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
BCP69-25-AA3-C-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD BC817 NPN GENERAL PURPOSE AMPLIFIER Description The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. 2 3 NPN EPITAXIAL SILICON TRANSISTOR 1 SOT-23 *Pb-free plating product number:BC817L PIN CONFIGURATION PIN NO. PIN NAME 1 EMITTER 2 BASE 3 COLLECTOR ORDERING INFORMATION Order Number Normal Lead Free Plating BC817-16-AE3-R BC817L-16-AE3-R BC817-25-AE3-R BC817L-25-AE3-R BC817-40-AE3-R BC817L-40-AE3-R Package SOT-23 SOT-23 SOT-23 Packing Tape & Reel Tape & Reel Tape & Reel MARKING BC817-16 BC817-25 BC817-40 6A 6B 6C www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., LTD 1 QW-R206-025.B BC817 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCES 50 V Emitter-Base Voltage VEBO 5.0 V Collector Current -Continuous IC 1.5 A 350 mW Power Dissipation PD 2.8 mW/°C Derate above 25°C ℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range and assured by design from –20℃~+85℃. THERMAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) CHARACTERISTIC Thermal Resistance, Junction to Ambient Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm. SYMBOL θJA RATING (Note) 350 UNIT °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage hFE1* hFE2 VCE(SAT) VBE(ON) Ic=100mA,VCE=1.0V Ic=500mA, VCE=1.0V Ic=500mA,IB=50Ma Ic=500mA, VCE=1.0V See Classification 40 0.7 1.2 SYMBOL V(BR)CEO V(BR)CES V(BR)EBO ICBO TEST CONDITIONS IC=10mA, IB=0 IC=100µA,IE=0 IE=10µA, Ic=0 VCB=20V VCB=20V,Ta=150°C MIN TYP MAX UNIT 45 50 5 100 5 V V V nA µA V V CLASSIFICATION OF hFE1* RANK RANGE BC817-16 100-250 BC817-25 160-400 BC817-40 250-600 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R206-025.B BC817 TYPICAL CHARACTERISTICS Typical Pulsed Current Gain vs Collector Current Typical Pulsed Current Gain, hFE NPN EPITAXIAL SILICON TRANSISTOR Collector-Emitter Saturation Voltage vs Collector Current Collector-Emitter Voltage, VCESAT (V) 500 VCE = 5V 400 300 200 100 0 0.001 0.01 0.1 12 Collector Current, IC (A) -40℃ 125℃ 25℃ 0.6 0.5 0.4 0.3 0.2 0.1 0 ß = 10 125℃ 25℃ -40℃ 0.01 0.1 Collector Current, IC (A) 1 3 Base-Emitter Saturation Voltage vs Collector Current Base-Emitter On Voltage, VBE(ON) (V) Base-Emitter Voltage, VBE(SAT) (V) Base-Emitter On Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0.001 -40℃ 25℃ 150℃ VCC = 5V 0.01 0.1 1 1.2 ß = 10 1 0.8 0.6 0.4 0.2 1 10 100 1000 Collector Current, IC (mA) 25℃ 125℃ -40℃ Collector Current, IC (A) Collector-Cutoff Current vs Ambient Temperature Collector Current , ICBO(nA) Collector-Base Capacitance vs Collector-Base Voltage Collector-BasE Capacitance, Cc (pF) 100 VCB = 40V 10 1 0.1 40 30 20 10 0 0 4 8 12 16 20 24 28 25 50 75 100 125 150 Ambient Temperature, TA (℃) Collector-Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R206-025.B BC817 TYPICAL CHARACTERISTICS(cont.) Gain Bandwidth Pro Duct, hFE(MHz) NPN EPITAXIAL SILICON TRANSISTOR VCE = 10V 400 300 200 100 0 1 10 100 1000 Collector Current, IC(mA) Gain Bandwidth Product vs Collector Current Power Dissipation, PD(mW) 500 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Temperature (℃) Power Dissipation vs Ambient Temperature SOT-23 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R206-025.B
BCP69-25-AA3-C-R
1. 物料型号: - BC817-16-AE3-R - BC817L-16-AE3-R - BC817-25-AE3-R - BC817L-25-AE3-R - BC817-40-AE3-R - BC817L-40-AE3-R

2. 器件简介: UTC BC817是一种NPN型外延硅晶体管,适用于中等功率放大器和开关,集电极电流可达1.2A。

3. 引脚分配: - 1号引脚:发射极(EMITTER) - 2号引脚:基极(BASE) - 3号引脚:集电极(COLLECTOR)

4. 参数特性: - 集电极-发射极电压(VCEO):45V - 集电极-基极电压(VCES):50V - 发射极-基极电压(VEBO):5.0V - 集电极连续电流(Ic):1.5A - 功率耗散:350mW - 结温(TJ):150°C - 存储温度(TSTG):-40°C至+150°C

5. 功能详解: - 该晶体管在25°C环境温度下的性能参数,包括各种电压、电流和温度的最大额定值。 - 热特性,包括在不同环境温度下的功率耗散。 - 电气特性,包括关闭特性和开启特性,如集电极-发射极击穿电压、集电极截止电流等。

6. 应用信息: - UTC BC817适用于一般中等功率放大器和开关,要求集电极电流达到1.2A。

7. 封装信息: - 封装类型:SOT-23 - 无铅镀层产品型号:BC817L - 封装配置:PIN CONFIGURATION
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