BCP69

UNISONIC TECHNOLOGIES CO., LTD BCP69 PNP MEDIUM POWER TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR FEATURES * High current (max. 1 A) * Low voltage (max. 20 V). * Complementary to UTC BCP68 1 SOT-223 APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages. *Pb-free plating product number:BCP69L ORDERING INFORMATION Order Number Normal Lead Free Plating BCP69-xx-AA3-F-R BCP69L-xx-AA3-F-R Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel BCP69L-xx-AA3-F-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating (1) R: Tape Reel (2) refer to Pin Assignment (3) AA3: SOT-223 (4) xx: refer to Classification of hFE (5) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R207-009,C BCP69 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (Open Emitter) VCBO -32 V Collector-Emitter Voltage (Open Base) VCEO -20 V Emitter-Base Voltage (Open Collector) VEBO -5 V Collector Current (DC) IC -1 A Peak Collector Current ICM -2 A Peak Base Current IBM -200 mA Total Power Dissipation, Ta ≤ 25℃ PD 1.35 W Junction Temperature TJ 150 ℃ Operating Ambient Temperature TOPR -45 ~ +150 ℃ Storage Temperature TSTG -65 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance From Junction To Ambient (Note 1) SYMBOL θJA RATINGS 91 UNIT K/W ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified.) PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Capacitance Transition Frequency DC current gain ratio of the complementary pairs SYMBOL TEST CONDITIONS VCE(SAT) IC = -1A, IB = -100mA IC = -5mA, VCE = -10V VBE IC = -1A, VCE = -1V IE = 0, VCB = -25V ICBO IE = 0, VCB = -25V, TJ = 150℃ IEBO IC = 0, VEB = -5V IC = -5mA, VCE = -10V hFE IC = -500mA, VCE = -1V IC = -1A, VCE = -1V CC IE = ie = 0, VCB = -5V, f = 1MHz fT IC = -10mA, VCE = -5V, f = 100MHz hFE1 |IC| = 0.5A, |VCE| = 1V hFE2 MIN TYP MAX UNIT -500 mV -620 mV -1 V -100 nA -10 µA -100 nA 375 48 40 1.6 pF MHz 50 85 60 CLASSIFICATION OF hFE RANK RANGE 16 100~250 25 160~375 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R207-009,C BCP69 TYPICAL CHARACTERISTICS PNP EPITAXIAL SILICON TRANSISTOR DC Current Gain (Typical Values) 400 VCE = -1V 300 hFE 200 100 0 -1 10 -1 -10 IC (mA) -102 -103 -10 4 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R207-009,C