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BD139-T60-K

BD139-T60-K

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    BD139-T60-K - NPN POWER TRANSISTORS - Unisonic Technologies

  • 数据手册
  • 价格&库存
BD139-T60-K 数据手册
UNISONIC TECHNOLOGIES CO., LTD BD139 NPN POWER TRANSISTORS FEATURES * High current (max.1.5A) * Low voltage (max.80V) NPN SILICON TRANSISTOR 1 TO-251 1 TO-126 Lead-free: BD139L Halogen-free: BD139G ORDERING INFORMATION Normal BD139-T60-K BD139-TM3-T Ordering Number Lead Free BD139L-T60-K BD139L-TM3-T Halogen Free BD139G-T60-K BD139G-TM3-T Package TO-126 TO-251 Pin Assignment 1 2 3 E C B B C E Packing Bulk Tube BD139L-T60-B (1)Packing Type (2)Package Type (3)Lead Plating (1) B: Bulk, T: Tube (2) T60: TO-126, TM3: TO-251 (3) G: Halogen Free, L: Lead Free, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-007.B BD139 ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Current Peak Base Current SYMBOL VCBO VCEO VEBO IC ICM lBM NPN SILICON TRANSISTOR RATINGS UNIT 100 V 80 V 5 V 1.5 A 2 A 1 A TO-126 1.25 W Power Dissipation (Ta=25°C) PD TO-251 W 1 Junction Temperature TJ °C +150 Operating Temperature TOPR °C -65~+150 Storage Temperature TSTG °C -65~+150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain hFE BD139-10 BD139-16 Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency DC Current Gain SYMBOL ICBO IEBO TEST CONDITIONS IE=0, VCB=30V IE=0, VCB=30V, TJ=125°C IC=0, VEB=5V IC=5mA VCE=2V (See Fig.1) IC =150mA IC =500mA IC =150mA, VCE=2V (See Fig.1) IC =500 mA, IB=50mA IC =500 mA, VCE=2V IC =500 mA, VCE=5V, f=100MHz MIN TYP MAX 100 10 100 250 160 250 0.5 1 190 UNIT nA μA nA 40 63 25 63 100 VCE(SAT) VBE fT V V MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R204-007.B BD139 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR DC Current Gain, hFE UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R204-007.B
BD139-T60-K 价格&库存

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