BSS138G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. 3 2 1 FEATURES * RDS(ON)=3.5Ω @ VGS=10V * RDS(ON)=6.0Ω @ VGS=4.5V * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SOT-23-3 (JEDEC TO-236) SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number BSS138G-AE2-R Package SOT-23-3 1 S Pin Assignment 2 G 3 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-271.c BSS138 PARAMETER Drain-Source Voltage Gate-Source Voltage Preliminary SYMBOL VDSS VGSS Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified) RATINGS UNIT 50 V ±20 V DC 0.22 Continuous Drain Current ID A Pulse 0.88 Power Dissipation 0.36 W PD Derate Above 25°C 2.8 mW/°C Junction Temperature TJ ℃ +150 Storage Temperature TSTG ℃ -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 350 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward ON CHARACTERISTICS (Note) Gate-Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance SYMBOL BVDSS ΔBVDSS/ΔTJ IDSS IGSS VGS(TH) TEST CONDITIONS VGS=0V, ID=250µA ID=250μA, Referenced to 25°C VDS=50V, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS=±20V VDS=VGS, ID=1m A 0.8 1.3 -2 0.7 1.0 0.2 0.12 0.5 27 13 6 1.7 0.1 0.4 2.5 9 20 7 0.8 2.4 3.5 6.0 MIN 50 72 0.5 0.1 ±100 1.5 TYP MAX UNIT V mV/℃ µA nA V mV/°C Ω A S pF pF pF nC nC nC ns ns ns ns V A ΔVGS(TH)/ΔTJ ID=1mA, Referenced to 25°C RDS(ON) VGS=10 V, ID=0.22A VGS=4.5 V, ID=0.22A VGS=10 V, VDS=5V VDS=10V, ID=0.22A On-State Drain Current ID(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note) Total Gate Charge QG VDS=25V, VGS=10V, ID=0.22A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, ID=0.29A,VGS=10V, Turn-ON Rise Time tR RG=6Ω, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS= 0V, IS=0.44A (Note) Max. Diode Forward Current IS Notes: Pulse test; pulse width ≤ 300us, duty cycle≤ 2% 5 18 36 14 1.4 0.22 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R502-271.c BSS138 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-271.c