BT131

UTC BT131 TRIACS LOGIC LEVEL DESCRIPTION Passivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers. logic integrated circuits and other low power gate trigger circuits. 1 TRIAC SYMBOL MT2 TO-92 G MT1 1:MT1 2:GATE 3:MT2 ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive Peak Off-State Voltage BT131-500 BT131-600 BT131-800 RMS On-State Current Full Sine Wave; Tlead≤51°C Non-Repetitive Peak On-State Current (Full Sine Wave; Tj=25°C prior to surge) t=20ms t=16.7ms Circuit Fusing (t=10ms) Repetitive Rate of Rise of On-State Current after Triggering ITM=1.5A, IG=0.2A, dIG/dt=0.2A/µs T2+G+ T2+GT2-GT2-G+ SYMBOL VDRM RATINGS 500* 600* 800* 1 UNIT V IT(RMS) A ITSM I2t 16 17.6 1.28 A A2s dIT/dt 50 50 50 10 A/µs Peak Gate Voltage VGM 5 V Peak Gate Current IGM 2 A Peak Gate Power PGM 5 W Average Gate Power (over any 20ms period) PG(AV) 0.5 W Operating Junction Temperature Tj 125 °C Storage temperature Tstg -40~150 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-001,A UTC BT131 THERMAL RESISTANCES PARAMETER Thermal Resistance Junction to Lead Full Cycle Half Cycle Thermal Resistance junciton to Ambient (PCB mounted ;lead length=4mm) TRIAC SYMBOL Rth j-lead 60 80 Rth j-lead 150 K/W K/W MIN TYP MAX UNIT ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified) PARAMETER SYMBOL IGT TEST CONDITIONS VD=12V, IT=0.1A T2+G+ T2+GT2-GT2-G+ VD=12V, IGT=0.1A T2+G+ T2+GT2-GT2-G+ IT=2.0A VD=12V, IT=0.1A VD=400V, IT=0.1A, Tj=125°C VD=VDRM(max), Tj=125°C VD=12V, IGT=0.1A VDM=67% VDRM(max), Tj=125°C Exponential waveform,RGK=1kΩ ITM=1.5A,VD=VDRM(max), IG=0.1A dIG/dt=5A/µs MIN TYP MAX UNIT STATIC CHARACTERISTICS Gate Trigger Current 0.4 1.3 1.4 3.8 1.2 4.0 1.0 2.5 1.2 0.7 0.3 0.1 1.3 15 2 3 3 3 7 5 8 5 8 1.5 1.5 0.5 5 mA Latching Current IL mA On-State Voltage Latching Current Gate Trigger Voltage Off-state Leakage Current VT VGT ID IH dVD/dt tgt V V mA mA V/µs µs 0.2 DYNAMIC CHARACTERISTICS Holding Current Critical Rate of Rise ofoff-state Voltage Gate Controlled Turn-on Time 5 UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-001,A UTC BT131 TYPICAL CHARACTERISTICS Figure 1.Maximum on -state Dissipation.Ptot vs RMS Onstate Current,IT(RMS),Whereα =conduction Angle. Tsp(max)/C 1.4 Ptot/W 104 1.2 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 IT(RMS)/A 1 α α α =180 107 TRIAC Figure 4.Maximum Permissible RMS Current IT(RMS) vs Lead Temperature Tlead 1.2 1 0.8 0.6 0.4 0.2 0 -50 0 50 Tsp/℃ Figure 5.Maximum Permissible Repetitive RMS on-state Current IT(RMS),vs Surge Duration,for Sinusoidal Currents,f=50Hz;Tlead≤ 51℃ IT(RMS)/A 100 150 IT(RMS)/A 108℃ 110 α =120 α =90 113 α =60 116 α =30 119 122 125 1.2 1000 Figure 2. Maximum Permissible Non-repetitive Peak On-state Current ITSM,vs Pulse Width tp,for Sinusoidal Currents,tp≤ 20ms ITSM/A IT ITSM time Tj initial=25℃max 3 2.5 2.0 1.5 100 dIT/dt limit T2-G+ quadrant 10 10us 100us 1ms T/s 10ms 100ms 1 0.5 0 0.01 0.1 1 Surge Duration /S 10 12 10 8 6 4 2 0 1 Figure 3 .Maximum Permissible Non-Repetitive peak on-state Current ITSM,vs Number of Cycles, for Sinusoidal Currents,f=50Hz ITSM/A IT ITSM time Tj initial=25℃max Figure 6.Normalised Gate Trigger Voltage VGT(Tj)/ VGT(25℃),vs Junction Temperature Tj VGT(Tj) VGT(25℃) 1.6 1.4 1.2 1 0.8 0.6 100 10 Number of Cycles at 50Hz 1000 0.4 -50 0 50 Tj/℃ 100 150 UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-001,A UTC BT131 Figure 7.Normalised G ate Trigger current IGT(Tj)/IGT(25 ℃),vs Junction Temperature Tj 2 T 2+G + T2+GT2-G T2-G + IT/A Tj=125 ℃ 1.5 Tj=25 ℃ Vo=1.0V 1 Rs=0.21Ohms 0.5 .5 0 -50 0 0 50 T j/℃ 100 150 0 0.5 1 VT/V 1.5 typ TRIAC Figure 10.Typical and Maximum On-state Characteristic IGT(Tj) 3 2.5 2 1.5 1 I GT(25 ℃) max 2 IL (Tj) 3 2.5 2 1.5 1 Figure 8.Normalised Latching Current IL (Tj)/IL (25 ℃),vs Junction T emperature T j 100 Figure 11.T ransient T hermal Impedance Zth j-lead,vs Pulse W idth tp Zth j-sp(K/W ) I L (25 ℃) 10 unidirectional 1 bidirectional PD tp t 0 50 Tj/ ℃ Figure 9.Normalised Holding Current I H (Tj)/IH (25 ℃),vs Junction Temperature Tj IH (Tj) I H (25 ℃) 100 150 0.01 10us 0.1ms 1 ms 10ms tp/s Figure 12.T ypical Critical Rate of Rise of off-state Voltage, dV D /dt vs Junction Temperature Tj 1000 dV D /dt(V/us) 0.1s 1s 10s 0.1 .5 0 -50 3 2.5 2 1.5 1 .5 0 100 10 1 -50 0 50 Tj/ ℃ 100 150 0 50 Tj/ ℃ 100 150 UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-001,A UTC BT131 TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-001,A