BT136

UTC BT136 TRIACS DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. TRIAC SYMBOL MT2 1 TO-220 G MT1 1:MT1 2:MT2 3:GATE ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages RMS on-state current full sine wave; Tmb ≤107 °C Non-repetitive peak on-state current (Full sine wave; Tj = 25 °C prior to surge) t = 20ms t = 16.7 ms I2t for fusing t = 10 ms Repetitive rate of rise of on-state current after triggering ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/μs T2+G+ T2+GT2-GT2-G+ SYMBOL VDRM IT(RMS) RATINGS 600 4 * UNIT V A ITSM 25 27 3.1 A A2s I2t dIT /dt 50 50 50 10 A/μs Peak gate voltage VGM 5 V Peak gate current IGM 2 A Peak gate power PGM 5 W Average gate power (over any 20 ms period) PG(AV) 0.5 W ℃ Storage temperature Tstg -40 ~ 150 ℃ Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/µs. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-004,A UTC BT136 THERMAL RESISTANCES PARAMETER Thermal resistance Junction to mounting base Full cycle Half cycle Thermal resistance Junction to ambient (In free air) TRIAC SYMBOL Rth j-mb Rth j-a 60 MIN TYP MAX 3.0 3.7 UNIT K/W K/W K/W ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise stated) PARAMETER Gate trigger current IGT SYMBOL CONDITIONS VD = 12 V; IT = 0.1 A T2+G+ T2+GT2-GT2-G+ VD = 12 V; IGT = 0.1 A T2+G+ T2+GT2-GT2-G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400V ; IT = 0.1 A; Tj=125°C VD = VDRM(max) ; Tj = 125 °C VDM = 67% VDRM(max) ; Tj =125°C; exponential waveform; gate open circuit VDM=400V;Tj=95°C;IT(RMS)=4A; dIcom /dt =1.8A/ms; gate open circuit ITM = 6 A; VD= VDRM(max) ; IG=0.1A; dIG/dt=5A/µs MIN TYP MAX UNIT STATIC CHARACTERISTICS 5 8 11 30 7 16 5 7 5 1.4 0.7 0.25 0.4 0.1 0.5 35 35 35 70 20 30 20 30 15 1.7 1.5 mA Latching current IL mA Holding current On-state voltage Gate trigger voltage IH VT VGT mA V V V mA Off-state leakage current Critical rate of rise of Off-state voltage Critical rate of change of Commutating voltage Gate controlled turn-on time ID DYNAMIC CHARACTERISTICS dVD /dt 100 250 V/µs dVcom/dt 50 V/µs tgt 2 µs UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-004,A UTC BT136 8 Ptot/W 7 6 5 4 3 2 1 0 0 1 ∞ ∞ Tmb(max)/C 101 104 ∞=180 107 120 110 90 60 113 30 116 119 122 125 5 2 3 4 IT(RMS)/A , Fig.1. Maximum on-state dissipation,P tot versusrms on-state current,I T(RMS) here =conduction angle. w ∞ 0 -50 0 50 100 IT(RMS)/A TRIAC 5 4 3 2 107℃ 1 150 Tmb/C Fig.4. Maximum permissible rms current lT(RMS), mb versus mounting base temperature T 1000ITSM/A IT T 100 dIT/dt limit T2-G+ quadrant 10 10us 100us 1ms 10ms 100ms ITSM 12IT(RMS)/A 10 time 8 6 4 2 0 0.01 0.1 1 10 Tj initial=25 max ℃ T/s Fig.2.Maximum Permissible non-repetitive peak TSM p on-state Current I ,versus pulse width, tfor p≒ sinusoidal currents,t 20ms ITSM/A 30 25 20 15 10 5 0 0 10 100 1000 T time Tj initial=25 max ℃ surge duration /S Fig. 5.Maximum permissible repetitive rms on-stat , current T(RMS)versus surge duration,for sinusoidal l m currents,f=50HZ;Tb ≒107℃ VGT(Tj) VGT(25℃) IT ITSM 1.6 1.4 1.2 1 0.8 0.6 0 0.4 -50 0 50 50 100 100 150 150 Number of cycles at 50Hz Fig3.Maximum Permissible non-repetitive peak on-state current I ,versus number of cycles,for TSM sinusoidal currents,f=50HZ. Tj/℃ Fig.6. Normalised gate trigger voltage . temperature jT VGT(Tj)/VGT(25℃),versus junction UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-004,A UTC BT136 IGT(Tj) 3 IGT(25℃) 2.5 2 1.5 1 0.5 0 -50 0 50 Tj/℃ 100 150 T2+G+ T2+GT2-GT2-G+ TRIAC IT/A Tj=125 ℃ Tj=25 ℃ Vo=1.27V Rs=0.091Ohms 12 10 8 6 4 2 0 typ max 0 0.5 1 1.5 VT/V 2 2.5 3 Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25℃ ),versus junction temperature Tj. IL(Tj) IL (25℃) Fig.10.Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 0.5 10 Zth j-mb(K/W ) unidirectional bidirectional 1 0.1 PD tp t 0 -50 0 50 Tj/℃ 100 150 0.01 10us 0.1ms 1ms 10ms tp/s 0.1s 1s 10s Fig.8.Normalised latching Current IL(Tj)/IL(25℃ ), versus junction temperature Tj IH(Tj) 3 IH (25℃) 2.5 2 1.5 1 0.5 0 -50 0 50 Tj/℃ Fig. 9.Normalised holding current IH (Tj)/IH (25℃ ), versus junction temperature Tj. 100 150 1 0 10 1000 Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp. dVcom/dt(V/us) off-state dV/dt lim it dlcom/dt=5.1 A/m s 3.9 3 2.3 1.8 1.4 50 Tj/C 100 150 Fig.12.Typical commutation dV/dt versus junction temperature,parameter commutation dlT/dt.The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dl T/dt UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-004,A UTC BT136 TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-004,A