BT138

BT138

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    BT138 - TRIACS LOGIC LEVEL - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
BT138 数据手册
UTC BT138 TRIACS LOGIC LEVEL DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating voltages and static switching. 1 TRIAC SYMBOL MT2 TO-220 G MT1 1:MT1 2:MT2 3:GATE ABSOLUTE MAXIMUM RATINGS ( Tj=25°C) PARAMETER Repetitive Peak Off State Voltage BT138-600 BT138-800 RMS On-state Current (Full sine wave; Tmb≤99°C) Non-repetitive Peak. On-State Current (Full sine wave; Tj=25°C prior to surge) t=20ms t=16.7ms SYMBOL VDRM RATING 600 800 12 UNIT V A A IT(RMS) ITSM I2t For Fusing (t=10ms) I2t A2s Repetitive Rate of Rise of On-state Current after Triggering dIT/dt (ITM=20A;IG=0.2A; dIG/dt=0.2A/µs) 50 T2+G+ A/µs 50 T2+G50 T2-G10 T2-G+ Peak Gate Voltage VGM 5 V Peak Gate Current IGM 2 A Peak Gate Power PGM 5 W Average Gate Power PG(AV) 0.5 W Operating Junction Temperature Tj 125 °C Storage Temperature Tstg -40~150 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15A/µs. 95 105 45 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-002,A UTC BT138 THERMAL RESISTANCES PARAMETER Thermal Resistance, Junction to Mounting Base Full cycle Half cycle Thermal Resistance, Junciton to Ambient In free air TRIAC SYMBOL Rθj-mb Rθj-a 60 MIN TYP MAX 1.5 2.0 - UNIT °C /W °C /W STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified) PARAMETER Gate Trigger Current T2+G+ T2+GT2-GT2-G+ Latching Current T2+G+ T2+GT2-GT2-G+ Holding Current On-State Voltage Gate Trigger Voltage Off-state Leakage Current IL IGT SYMBOL TEST CONDITIONS VD=12V, IT=0.1A MIN TYP 5 8 10 12 MAX 35 35 35 70 40 60 40 60 30 1.65 1.5 0.5 UNIT mA VD=12V, IGT =0.1A 7 20 8 10 6 1.4 0.25 0.7 0.4 0.1 mA IH VT VGT ID VD=12V, IGT=0.1A IT=15A VD=12V, IT=0.1A VD=400V, IT=0.1A, Tj=125°C VD=VDRM(max) , Tj=125°C mA V V mA DYNAMIC CHARACTERISTICS (Tj=25°C,unless otherwise specified) PARAMETER Critical Rate Of Rise Of Off-State Voltage Critical Rate Of Change Of Commutating Voltage Gate Controlled Turn-on Time SYMBOL dVD/dt TEST CONDITIONS VDM=67% VDRM(max), Tj=125°C Exponential waveform, Gate open circuit VDM=400V,Tj=95°C, IT(RMS)=12A dlcom/dt =5.4A/ms, Gate open circuit ITM=16A, VD=VDRM(max), IG=0.1A dIG/dt=5A/µs MIN 100 TYP MAX 250 UNIT V/µs 20 V/µs dVcom/dt tgt 2 µs UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-002,A UTC BT138 TYPICAL CHARACTERISTICS Figure 1.Maximum on -state Dissipation.Ptot vs RMS On-state Current,I T(RM S ),W hereα=conduction Angle. 20 Ptot/W T mb(max)/C 95 15 TRIAC Figure 4.Maximum Permissible RMS Current IT(RM S ) vs mounting baseT emperature T m b IT (RMS)/A α=180 15 α α α=120 102.5 α=90 α=60 α=30 110 99 ℃ 10 10 5 5 117.5 0 0 5 IT (RMS)/A 10 125 15 0 -50 0 50 T mb/℃ 100 150 1000 Figure 2. Maximum Permissible Non-repetitive Peak O n-state Current I TS M ,vs Pulse W idth t p ,for Sinusoidal Currents,t p ≒20ms IT SM/A 25 20 15 Figure 5.Maximum Permissible Repetitive RMS on-state Current IT (RMS),vs Surge Duration,for Sinusoidal C urrents,f=50Hz;T mb ≒99 ℃ IT (RMS)/A 100 dI T/dt limit T 2-G + quadrant 10 10us 100us 1 ms T /s IT T Tj initial= 25 ℃m ax ITSM time 10 5 0 0.01 10ms 100ms 0.1 1 Surge Duration /S 10 100 80 Figure 3 .Maximum Permissible Non-Repetitive peak on-state Current ITSM ,vs Number of Cycles, for Sinusoidal Currents,f=50Hz IT SM/A IT ITS M time T Tj initial=25 ℃m ax V GT(T j) 1.6 1.4 1.2 1 Figure 6.Normalised G ate T rigger Voltage V GT(T j)/ V GT(25 ℃),vs Junction T emperature T j V GT(25 ℃) 60 40 20 0 0.8 0.6 0.4 -50 0 50 T j/℃ 100 150 1 100 10 Number of Cycles at 50Hz 1000 UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-002,A UTC BT138 Figure 7.Normalised Gate T rigger Current IGT(T j)/IGT(25 ℃),vs Junction T emperature Tj IGT(T j) IGT(25 ℃) T 2+G+ T 2+G T 2-GT 1-G + Figure 10.Typical and Maximum O n-state Characteristic 40 IT/A Tj=125 ℃ 30 Tj=25 ℃ Vo=1.75V Rs=0.316Ohms 20 typ TRIAC 3 2.5 2 1.5 1 max 10 0.5 0 -50 0 50 T j/℃ 100 150 0 0 0.5 1 1.5 VT /V 2 2.5 3 IL (T j) 3 2.5 2 1.5 1 IL (25 ℃) Figure 8.Normalised Latching Current IL (T j)/IL (25 ℃),vs Junction T emperature T j 10 Figure 11.Transient Thermal Impedance Zth j-mb,vs Pulse W idth tp Zth j-mb (K/W ) 1 unidirectional bidirectional 0.1 0.01 0.5 0 -50 0 50 T j/℃ Figure 9.Normalised Holding Current IH (T j)/IH (25 ℃),vs Junction T emperature Tj IH (T j) 3 2.5 2 1.5 1 0.5 0 -50 0 1 50 T j/℃ 100 150 0 50 Tj/℃ 10 100 IH (25 ℃) 100 150 0.001 10us 0.1ms 1 ms 10ms tp/s PD tp t 0.1s 1s 10s Figure 12.T ypical commutation dV/dt vs junction temperature,parameter commutation dlT/dt.The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dlT/dt dV/dt(V/us) 1000 dIcom/dt=5.4A/ms 100 150 UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-002,A UTC BT138 TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-002,A
BT138
物料型号: - UTC BT138

器件简介: - 该器件为TRIAC(三端双向可控硅),封装在塑料外壳中,适用于需要高双向瞬态阻断电压和高热循环性能的应用,如电机控制、工业和家庭照明、加热电压和静态开关。

引脚分配: - 1: MT1 - 2: MT2 - 3: GATE

参数特性: - 绝对最大额定值(Tj=25°C): - 重复峰值关断状态电压(VDRM):BT138-600为600V,BT138-800为800V - 有效值通态电流(IT(RMS)):12A - 非重复峰值通态电流(ITSM):95A/105A(不同条件下) - 触发电流(I't For Fusing):45A2s - 通态电流上升速率(dlr/dt):50A/us(T2+G+)、50A/us(T2+G-)、50A/us(T2-G-)、10A/us(T2-G+) - 峰值门极电压(VGM):5V - 峰值门极电流(IGM):2A - 峰值门极功率(PGM):5W - 平均门极功率(PG(AV)):0.5W - 工作结温(Tj):125℃ - 存储温度(Tstg):-40~150℃

功能详解: - 该器件为可控硅,通过门极触发控制导通与关断,具体特性包括门极触发电流、保持电流、通态电压等。

应用信息: - 典型应用包括电机控制、工业和家庭照明、加热电压和静态开关。

封装信息: - 封装在塑料外壳中,具体的封装类型文档中未详细说明。
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