BT150

UTC BT150 SCRs DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. SYMBOL 1 A K G 1: CATHODE 2: ANODE TO-220 3: GATE ABSOLUTE MAXIMUM RATINGS. PARAMETER Repetitive peak off-state voltages BT150-500 BT150-650 BT150-800 Average on-state current (half sine wave; Tmb ≤113 °C) SYMBOL VDRM , VRRM RATING 500* 650* 800 2.5 UNIT V A IT(AV) 4 A RMS on-state current IT(RMS) (all conduction angles) Non-repetitive peak on-state current (half sine wave; Tj = 25 °C prior to surge) A ITSM 35 t = 10 ms 38 t = 8.3 ms I2t for fusing (t = 10 ms) I2t 6.1 A2s Repetitive rate of rise of on-state current after triggering A/μs dIT /dt 50 (ITM = 10 A; IG = 50 mA; dIG /dt = 50 mA/ms) Peak gate current IGM 2 A Peak gate voltage VGM 5 V Peak reverse gate voltage VRGM 5 V Peak gate power (over any 20 ms period) PGM 5 W Average gate power PG(AV) 0.5 W ℃ Storage temperature Tstg -40~150 ℃ Operating junction temperature Tj 125** *Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/µs. ** Note: operation above 110℃ may require the use of a gate to cathode resistor of 1kΩ or less. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R301-008,B UTC BT150 THERMAL RESISTANCES PARAMETER Thermal resistance Junction to mounting base Thermal resistance Junction to ambient In free air SYMBOL Rth j-mb Rth j-a MIN TYP 60 MAX 2.5 UNIT K/W K/W STATIC CHARACTERISTICS(Tj=25°C,unless otherwise stated) PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current SYMBOL IGT IL IH VT VGT I D , IR CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = VDRM(max) ; IT = 0.1 A; Tj = 110 °C VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 °C MIN TYP 15 0.17 0.10 1.23 0.4 0.2 0.1 MAX 200 10 6 1.8 1.5 0.5 UNIT mA mA MA V V mA 0.1 DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise stated) PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated Turn-off time SYMBOL dVD /dt tgt tq CONDITIONS VDM = 67% VDRM(max) ; Tj = 125 °C; exponential waveform; RGK = 100Ω ITM = 10 A; VD = VDRM(max) ; IG = 5mA; dIG /dt = 0.2A/µs VD = 67% VDRM(max) ; Tj = 125 °C; ITM = 8A; VR = 10V; dITM /dt = 10 A/μs; dVD /dt = 2V/μs; RGK = 1kΩ MIN TYP 50 2 100 MAX UNIT V/µs µs µs UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-008,B UTC BT150 ITSM/A IT 112.5 2.2 2.8 4 117.5 120 α 0.5 1 1.5 2 2.5 3 122.5 125 0 1 10 100 1000 1.9 a=1.57 115 30 20 TT ITSM time 6 5 4 3 2 1 Ptot/W conduction form angle factor degrees a 4 30 2.8 60 2.2 90 1.9 120 1.57 180 Tmb(max)/C 110 40 Tj initial=25℃max 10 0 0 IF(AV)/A Fig.1. Maximum on-state dissipation,Ptot,versus average on-state current,IT(AV),where a=form factor=IT(RMS)/IT(AV). 1000 ITSM/A 12 10 8 100 IT T 10 10us dIT/dt limit 6 ITSM time 100us 4 2 Number of half cycles at 50Hz Fig4.Maximum Permissible non-repetitive peak on-state current ITSM,versus number of cycles,for sinusoidal currents,f=50Hz. IT(RMS)/A Tj initial=25℃max 10ms 1ms T/s Fig.2.Maximum Permissible non-repetitive peak on-state Current ITSM,versus pulse width tp, for sinusoidal currents,tp≒10ms 0 0.01 10 0.1 1 surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),versus surge duration,for sinusoidal currents,f=50Hz;Tmb ≦113℃ VGT(Tj) VGT(25℃) 5 4 3 2 1 IT(RMS)/A 113℃ 1.6 1.4 1.2 1 0.8 0.6 0 50 Tmb/C 100 150 0 -50 0 0 0.4 -50 50 50 Tj/℃ 100 100 150 150 Fig.3. Maximum permissible rms current lT(RMS), versus mounting base temperature Tmb Fig.6. Normalised gate trigger voltage VGT(Tj)/VGT(25℃,versus junction temperature Tj. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R301-008,B UTC BT150 IGT(Tj) IGT(25℃) IT/A Tj=125℃ Tj=25℃ Vo=1.26V Rs=0.099Ω 3 2.5 2 1.5 1 0.5 0 -50 2 10 8 6 4 2 typ max 50 100 150 Tj/C Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25℃),versus junction temperature Tj. 0 0 0 0.5 1 1.5 VT/V 2 2.5 3 Fig.10.Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 0.5 IL(Tj) IL(25℃) 10 Zth j-mb(K/W) 1 0.1 P D tp t 0 -50 0 50 Tj/C 100 150 0.01 10us 0.1ms 1ms 10ms 0.1s tp/s 1s 10s Fig.8.Normalised latching Current IL(Tj)/IL(25℃), versus junction temperature Tj IH(Tj) IH(25℃) Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp. 3 2.5 2 1.5 1 0.5 1000 dVD/dt(V/us) 100 RGK=100Ω 10 0 -50 50 100 150 Tj/C Fig. 9.Normalised holding current IH(Tj)/IH(25℃), versus junction temperature Tj. 0 1 0 100 150 Tj/C Fig.12.Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 50 UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R301-008,B UTC BT150 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R301-008,B