UNISONIC TECHNOLOGIES CO., LTD BT169
SCRS
DESCRIPTION
Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
SCR
SYMBOL
Lead-free: BT169xL Halogen-free: BT169xG
ORDERING INFORMATION
Normal BT169B-T92-B BT169B-T92-K BT169D-T92-B BT169D-T92-K BT169E-T92-B BT169E-T92-K BT169G-T92-B BT169G -T92-K BT169H-T92-B BT169H -T92-K Note: Pin Assignment: Ordering Number Lead Free Halogen Free BT169BL-T92-B BT169BG-T92-B BT169BL-T92-K BT169BG-T92-K BT169DL-T92-B BT169DG-T92-B BT169DL-T92-K BT169DG-T92-K BT169EL-T92-B BT169EG-T92-B BT169EL-T92-K BT169EG-T92-K BT169GL-T92-B BT169GP-T92-B BT169GL-T92-K BT169GP-T92-K BT169HL-T92-B BT169HG-T92-B BT169HL-T92-K BT169HG-T92-K C:CATHODE G:GATE A:ANODE Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 K G A K G A K G A K G A K G A K G A K G A K G A K G A K G A Packing Tape Box Bulk Tape Box Bulk Tape Box Bulk Tape Box Bulk Tape Box Bulk
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QUICK REFERENCE DATA
PARAMETER Repetitive Peak Off-State Voltages Average On-State Current RMS On-State Current Non-Repetitive Peak On-State Current SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM BT169B BT169D BT169E BT169G BT169H MAX MAX MAX MAX MAX 200 400 500 600 800 0.5 0.5 0.5 0.5 0.5 0.8 0.8 0.8 0.8 0.8 8 8 8 8 8
SCR
UNIT MAX V A A A
ABSOLUTE MAXIMUM RATINGS
SYMBOL RATINGS UNIT BT169B 200 BT169D 400 Repetitive Peak Off-State Voltages(Note 2) BT169E VDRM,VRRM V 500 BT169G 600 BT169H 800 Peak Gate Voltage VGM 5 V Peak Reverse Gate Voltage VRGM 5 V Peak Gate Current IGM 1 A Average On-State Current IT(AV) 0.5 A (Half Sine Wave, TLEAD≦83°C) RMS On-State Current (All Conduction Angles) IT(RMS) 0.8 A Non-Repetitive Peak On-State Current t=10ms 8 A ITSM (Half Sine Wave, TJ=25°C Prior to Surge) t=8.3ms 9 A I2t For Fusing (t=10ms) I2 t 0.32 A2S Repetitive Rate of Rise of On-State Current After dIT/dt 50 A/μs Triggering (ITM=2A,IG=10mA, dIG/dt=100mA/μs) Peak Gate Power PGM 2 W Average Gate Power (Over any 20 ms period) PG(AV) 0.1 W Junction Temperature TJ +125 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. PARAMETER
THERMAL DATA
PARAMETER Thermal Resistance Junction to Ambient (typ.) Note: pcb mounted, lead length=4mm SYMBOL θJA RATINGS 150 UNIT °C /W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER STATIC CHARACTERISTICS Gate Trigger Current Latching Current Holding Current On-State Voltage Gate Trigger Voltage Off-State Leakage Current SYMBOL IGT IL IH VT VGT ID,IR TSET CONDITIONS VD=12V, IT=10 mA, gate open circuit VD=12V, IGT=0.5mA, RGK=1kΩ VD=12V,IGT=0.5mA, RGK=1kΩ IT=1A VD=12V, IT=10mA, gate open circuit VD=VDRM(MAX), IT=10mA, TJ=125°C, gate open circuit VD=VDRM(MAX), VR=VRRM(MA\X), TJ=125°C, RGK=1kΩ MIN 25 2 2 1.2 0.2 0.5 0.3 0.05 TYP MAX 55 6 5 1.35 0.8 0.1 UNIT μA mA mA V V mA
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER DYNAMIC CHARACTERISTICS Ciritical Rate of Rise of Off-State Voltage Gate Controlled Turn-On Time Circuit Commutated Turn-Off Time SYMBOL dVD/dt tgt tq TSET CONDITIONS VDM=67% VDRM(MAX), TJ=125°C, exponential waveform, RGK=1kΩ ITM=2A,VD=VDRM(MAX), IG=10mA, dIG/dt=0.1A/μs VD=67% VDRM(MAX), TJ=125°C, ITM=1.6A,VR=35V, dITM/dt=30A/μs, VD/dt=2V/μs, RGK=1kΩ MIN 500 TYP 800 2 100 MAX
SCR
UNIT V/μs μs μs
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Maximum Permissible RMS Current, IT(RMS)
Maximum Permissible Non-Repetitive Peak On-State Current, ITSM (A)
Maximum On-State Dissipation, PD (W)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Tc(MAX) (C)
Maximum Permissible Repetitive RMS On-State Current, IT(RMS) (A)
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Maximnum Permissible Non-Repetitive Peak On-State Current, ITSM (A)
Normalised Gate Trigger Voltage
VGT(TJ) VGT(25°C)
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QW-R301-015,C
SCR
BT169
TYPICAL CHARACTERISTICS(Cont.)
Normalised Gate Trigger Current vs. Junction Temperature Normalised Gate Trigger Current IGT(TJ) VGT(25°C) 3.0 2.5 2.0 IT (A) 1.5 1.0 0.5 0 -50 5 4 3 2 1 0 0 50 100 150 0 0.5 1.0 1.5 VT (V) 2.0
TJ=125°C - - TJ= 25°C
SCR
Typical And Maximum On-State Characteristic
VOUT=1.067V Rs=0.187
typ
max
2.5
Junction Temperature, TJ (°C)
UNISONIC TECHNOLOGIES CO., LTD
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Typical, Critical Rate Of Rise Of Off-State Voltage, dVD/dt(V/us)
Normalised Holding Current IH(TJ) IH(25°C)
Transient Thermal Impedance, θJ-LEAD (°C/W)
Normalised Latching Current IL(TJ) IL(25°C)
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SCR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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