BTC1510F3L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD BTC1510F3 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application.  FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain  EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free BTC1510F3L-TA3-T BTC1510F3G-TA3-T TO-220 BTC1510F3L-TF3-T BTC1510F3G-TF3-T TO-220F BTC1510F3L-TF1-T BTC1510F3G-TF1-T TO-220F1 BTC1510F3L-TM3-T BTC1510F3G-TM3-T TO-251 BTC1510F3L-TN3-R BTC1510F3G-TN3-R TO-252 BTC1510F3L-TQ2-T BTC1510F3G-TQ2-T TO-263 BTC1510F3L-TQ2-R BTC1510F3G-TQ2-R TO-263 Note: Pin Assignment: B: Base C: Collector E: Emitter  Pin Assignment 1 2 3 B C E B C E B C E B C E B C E B C E B C E Packing Tube Tube Tube Tube Tape Reel Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R223-002. F BTC1510F3  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT VCBO 150 V Collector-Base Voltage V 150 V CEO Collector-Emitter Voltage Emitter-Base Voltage VEBO 5 V DC 10 Collector Current IC A Pulse(Note 2) 15 TO-220/TO-220F W 2 TO-220F1 TA=25°C W TO-251/TO-252 1.1 W TO-263 2 PD Collector Dissipation W TO-220 72 W TO-220F/TO-220F1 36 TC=25°C W TO-251/TO-252 44 W TO-263 60 Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse test: Pulse Width=100ms  ELECTRICAL CHARACTERISTICS PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Base-Emitter Turn-On Voltage (Note) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current SYMBOL TEST CONDITIONS BVCBO IC=100µA, IE=0 BVCEO IC=5mA, IB=0 VCE=3V, IC=5A VBE(ON) VCE=3V, IC=10A IC=5A VFEC ICBO VCB=150V, IE=0 ICEO VCE=150V, IE=0 IEBO VEB=5V, IC=0 MIN 150 150 TYP MAX UNIT V V 2.8 4.5 3 200 200 2 V µA µA mA 20 K 2 2 3 1.5 V V ON CHARACTERISTICS VCE=3V, IC=5A VCE=3V, IC=10A Base-Emitter Saturation Voltage(Note) VBE(SAT) IC=5A, IB=5mA IC=5A, IB=10mA Collector-Emitter Saturation Voltage VCE(SAT) IC=10A, IB=100mA (Note) IC=5A, IB=2.5mA Note: Pulse test: Pulse Width≦380μs, Duty Cycle≦2% DC Current Gain (Note) hFE UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 100 V 2 of 3 QW-R223-002.F BTC1510F3 NPN SILICON TRANSISTOR Collector Current, IC (µA) Collector Current, IC (µA) TYPICAL CHARACTERISTICS  UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R223-002.F