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BU931

BU931

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    BU931 - NPN POWER DARLINGTON - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
BU931 数据手册
UNISONIC TECHNOLOGIES CO., LTD BU931 NPN POWER DARLINGTON FEATURES * High operating junction temperature * High voltage ignition coil driver * Very rugged bipolar technology NPN SILICON TRANSISTOR 1 TO-3P INTERNAL SCHEMATIC DIAGRAM C B (1) (2) *Pb-free plating product number: BU931L E (3) ORDERING INFORMATION Order Number Normal Lead Free Plating BU931-T3P-K BU931L-T3P-K Package TO-3P Pin Assignment 1 2 3 B C E Packing Bulk BU931L-T3P-K (1)Packing Type (2)Package Type (3)Lead Plating (1) K: Bulk (2) T3P: TO-3P (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R214-012,A BU931 ABSOLUTE MAXIMUM RATINGS (Ta=25℃) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage (VBE = 0) VCES 500 V Collector-Emitter Voltage (IB = 0) VCEO 400 V Emitter-Base Voltage (IC = 0) VEBO 5 V Collector Current IC 15 A Collector Peak Current ICM 30 A Base Current IB 1 A Base Peak Current IBM 5 A Total Dissipation (Tc = 25 ℃) PD 175 W Junction Temperature TJ +200 ℃ Storage Temperature TSTG -65 ~ +200 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Case Max SYMBOL θJC RATING 1.1 UNIT ℃/W ELECTRICAL CHARACTERISTICS PARAMETER Collector Cut-off Current (IB = 0) Emitter Cut-off Current (IC = 0) Collector-Emitter Saturation Voltage(Note) SYMBOL ICEO IEBO VCE(SAT) TEST CONDITIONS VCE = 450 V VCE = 450 V, TJ = 125 ℃ VEB = 5 V IC = 7 A, IB = 70 mA IC = 8 A, IB = 100 mA IC = 10 A, IB = 250 mA IC = 7 A, IB = 70 mA IC = 8 A, IB = 100 mA IC = 10 A, IB = 250 mA IC = 5 A, VCE = 10 V IF = 10 A VCC = 24 V, Vclamp = 400 V L = 7 mH VCC = 12 V, Vclamp = 300 V L = 7 mH IC = 7 A, IB = 70 mA VBE = 0, RBE = 47Ω MIN TYP MAX UNIT 100 µA 0.5 mA 20 mA 1.6 V 1.8 1.8 2.2 2.4 2.5 300 2.5 8 15 0.5 V A µs µs V V V V V Base-Emitter Saturation Voltage(Note) DC Current Gain Diode Forward Voltage Functional Test VBE(SAT) hFE VF Inductive Load Storage Time / Fall Time tS tF Note: Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R214-012,A BU931 TEST CIRCUITS NPN SILICON TRANSISTOR 24V L=7mH VZ Driver and current limiting circuit 100Ω VD 12V 7mH T.U.T 0.22µF VIN T.U.T 47Ω 0.2Ω Vclamp Functional Test Circuit Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R214-012,A BU931 TYPICAL CHARACTERISTICS Collector Emitter Saturation Voltage vs. Collector Current Collector-Emitter Saturation Voltage, VCE(SAT)(V) Collector-Emitter Saturation Voltage, VCE(SAT) (V) hFE=50 3 NPN SILICON TRANSISTOR Collector Emitter Saturation Voltage vs. Collector Current hFE=100 3 2 -40℃ 25℃ 2 25℃ 1 -40℃ 125℃ 0 1 2 4 6 1 125℃ 0 1 2 4 6 Collector Current IC (A) , Collector Current, I C (A) Base Emitter Saturation Voltage vs. Collector Current Base Emitter Saturation Voltage vs. Collector Current Base-Emitter Saturation Voltage, VBE(SAT) (V) Base-Emitter Saturation Voltage, VBE(SAT)(V) h FE=50 3 hFE=100 3 2 -40℃ 25℃ 2 -40℃ 25℃ 1 125℃ 1 125℃ 0 1 2 4 6 0 1 2 4 6 Collector Current IC (A) , DC Current Gain vs. Collector Current 8 6 Collector Current, IC (A) VCE=2V DC Current Gain, hFE 4 2 25℃ 10 2 8 6 4 2 10 -1 10 2 4 6 8 1 2 4 68 Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R214-012,A BU931 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R214-012,A
BU931
### 物料型号 - BU931NPN: 普通型号 - BU931L: 无铅镀层型号

### 器件简介 BU931NPN是一款由Unisonic Technologies Co., Ltd生产的NPN达林顿硅晶体管,具有高工作结温、高电压点火线圈驱动和非常坚固的双极技术。

### 引脚分配 - TO-3P封装: B(基极), C(集电极), E(发射极)

### 参数特性 - 最大集电极-发射极电压(VCES): 500V - 最大发射极-基极电压(VEBO): 5V - 最大集电极电流(Ic): 15A - 最大集电极峰值电流(ICM): 30A - 最大基极电流(IB): 1A - 最大基极峰值电流(BM): 5A - 总耗散功率(Po): 175W - 结温(TJ): +200°C - 存储温度(TSTG): -65~+200°C

### 功能详解 BU931NPN具有高工作结温和高电压点火线圈驱动能力,适合用于要求高可靠性和高功率的应用场合。它的内部结构使其能够承受较大的电压和电流,同时保持稳定的性能。

### 应用信息 BU931NPN主要应用于高电压、大电流的场合,如点火系统、电源控制等。

### 封装信息 - TO-3P: 这是BU931NPN的标准封装形式,具有三个引脚,分别对应基极、集电极和发射极。
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