UNISONIC TECHNOLOGIES CO., LTD BU931
NPN POWER DARLINGTON
FEATURES
* High operating junction temperature * High voltage ignition coil driver * Very rugged bipolar technology
NPN SILICON TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
1
TO-3P
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free BU931L-T3P-T BU931G-T3P-T Package TO-3P Pin Assignment 1 2 3 B C E Packing Tube
www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd
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BU931
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
NPN SILICON TRANSISTOR
PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage (VBE=0) VCES 500 V Collector-Emitter Voltage (IB=0) VCEO 400 V Emitter-Base Voltage (IC=0) VEBO 5 V Collector Current IC 15 A Collector Peak Current ICM 30 A Base Current IB 1 A Base Peak Current IBM 5 A Power Dissipation (TC=25°C) PD 175 W Junction Temperature TJ +200 °C Storage Temperature TSTG -65 ~ +200 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction to Case SYMBOL θJC RATING 1.1 UNIT °C/W
ELECTRICAL CHARACTERISTICS
PARAMETER Collector Cut-off Current (IB=0) Emitter Cut-off Current (IC=0) Collector-Emitter Saturation Voltage (Note) SYMBOL ICEO IEBO VCE(SAT) TEST CONDITIONS VCE = 450 V VCE =450V, TJ =125°C VEB = 5V IC = 7A, IB =70mA IC = 8A, IB =100mA IC = 10A, IB =250mA IC = 7A, IB =70mA IC = 8A, IB =100mA IC = 10A, IB =250mA IC = 5A, VCE =10V IF = 10 A VCC =24V, Vclamp =400V L=7mH VCC = 12V, Vclamp =300V L=7mH IC =7A, IB =70mA VBE =0, RBE =47Ω MIN TYP MAX UNIT 100 μA 0.5 mA 20 mA 1.6 V 1.8 1.8 2.2 2.4 2.5 300 2.5 8 15 0.5 V A μs μs V V V V V
Base-Emitter Saturation Voltage (Note) DC Current Gain Diode Forward Voltage Functional Test
VBE(SAT) hFE VF
Inductive Load Storage Time / Fall Time
tS tF
Note: Pulsed: Pulse duration = 300μs, duty cycle 1.5 %
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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BU931
TEST CIRCUITS
24V L=7mH VZ Driver and current limiting circuit
NPN SILICON TRANSISTOR
VD
12V
7mH T.U.T 100Ω 0.22µF VIN T.U.T 47Ω 0.2Ω Vclamp
Functional Test Circuit
Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Collector Emitter Saturation Voltage vs. Collector Current hFE=50 Collector-Emitter Saturation Voltage, VCE(SAT)(V) 3
NPN SILICON TRANSISTOR
Collector-Emitter Saturation Voltage, VCE(SAT)(V)
Collector Emitter Saturation Voltage vs. Collector Current hFE=100 3
2
125°C 25°C -40°C
2
125°C 25°C -40°C
1
1
0
1
2
4
6
0
1
2
4
6
Collector Current, IC (A) Base Emitter Saturation Voltage vs. Collector Current hFE=50 3
Collector Current, IC (A) Base Emitter Saturation Voltage vs. Collector Current Base-Emitter Saturation Voltage, VBE(SAT)(V) hFE=100 3
Base-Emitter Saturation Voltage, VBE(SAT)(V)
125°C 25°C -40°C
2
2
125°C 25°C -40°C
1
1
0
1
2
4
6
0
1
2
4
6
Collector Current, IC (A) DC Current Gain vs. Collector Current
8 6 4
Collector Current, IC (A)
VCE=2V
DC Current Gain, hFE
2
25°C 102
8 6 4
2
10
10-1
2
1 Collector Current, IC (A)
4
6
8
2
4
6
8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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BU931
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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