D882SSG-P-AE3-R

UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  FEATURES * High Current Output up to 3A * Low Saturation Voltage * Complement to B772SS  APPLICATIONS * Audio Power Amplifier * DC-DC Convertor * Voltage Regulator   ORDERING INFORMATION Ordering Number Package D882SSG-x-AE3-R SOT-23 1 E Pin Assignment 2 3 B C Packing Tape Reel MARKING D82G www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-018.E D882SS  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current TA=25°C Collector Dissipation TC=25°C SYMBOL VCBO VCEO VEBO IC ICP IB RATINGS 40 30 5 3 7 0.6 350 10 PC UNIT V V V A A A mW W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 VCE=2V, IC=20mA VCE=2V, IC=1A IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=5V, IC=0.1A VCB=10V, IE=0, f=1MHz MIN 40 30 5 TYP MAX 1000 1000 30 100 200 150 0.3 1.0 80 45 400 0.5 2.0 UNIT V V V nA nA V V MHz pF Note: Pulse test: PW