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DTD143EG-AE3-R

DTD143EG-AE3-R

  • 厂商:

    UTC(友顺)

  • 封装:

    SOT-23

  • 描述:

    数字晶体管(内置电阻器)

  • 数据手册
  • 价格&库存
DTD143EG-AE3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD DTD143E NPN SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN RESISTORS)  3 2 FEATURES 1 SOT-23 (JEDEC TO-236) * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input.  3 2 1 SOT-323 EQUIVALENT CIRCUIT 1 TO-92  ORDERING INFORMATION Order Number Lead Free DTD143EL-T92-B DTD143EL-T92-K  Halogen Free DTD143EG-AE3-R DTD143EG-AE3-R DTD143EG-T92-B DTD143EG-T92-K Package SOT-23 SOT-323 TO-92 TO-92 Pin Assignment 1 2 3 G I O G I O G O I G O I Packing Tape Reel Tape Reel Tape Box Bulk MARKING SOT-23 / SOT-323 TO-92 DE3E www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-084.D DTD143E  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless others specified) PARAMETER RATINGS 50 -10 ~ +30 500 SOT-23/SOT-323 200 Power Dissipation PD TO-92 625 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Supply Voltage Input Voltage Output Current  SYMBOL VCC VIN IOUT UNIT V V mA mW mW °C °C ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified) PARAMETER SYMBOL VIN(OFF) Input Voltage VIN(ON) Output Voltage VOUT(ON) Input Current IIN Output Current IOUT(OFF) DC Current Gain hFE Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT Note: Transition frequency of the device TEST CONDITIONS VCC =5V, IOUT =100μA VOUT =0.3V, IOUT =20mA IOUT/IIN =50mA/2.5mA VIN=5V VCC =50V, VIN =0V VOUT =5V, IOUT =50mA VCE =10V, IE =−50mA, f=100MHz(Note) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 3 47 3.29 0.8 MAX UNIT 0.5 V 0.1 0.3 1.8 0.5 V mA μA 4.7 1 200 6.11 1.2 KΩ MHz 2 of 3 QW-R206-084.D DTD143E  NPN SILICON TRANSISTOR TYPICAL CHARACTERISTIC Output Voltage vs. Output Current DC Current Gain vs. Output Current 1K VOUT=5V 500 TA=100 25 -40 200 1000 100 50 50 20 20 10 10 5 5 2 2 1 2 5 TA=100 25 -40 200 100 1 0.5 lOUT/lIN=20 500 10 20 50 100 200 500 Output Current, IOUT (mA) 1 0.5 1 2 5 10 20 50 100 200 500 Output Current, IOUT (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-084.D
DTD143EG-AE3-R 价格&库存

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DTD143EG-AE3-R
    •  国内价格
    • 5+0.13149
    • 50+0.10379
    • 150+0.08840
    • 500+0.07917
    • 3000+0.07117
    • 6000+0.06686

    库存:0

    DTD143EG-AE3-R
    •  国内价格
    • 1+0.09800
    • 30+0.09450
    • 100+0.09100
    • 500+0.08400
    • 1000+0.08050
    • 2000+0.07840

    库存:40