MJE13003L-B-T60-K

UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.  FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability  APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 9 QW-R204-004.T MJE13003  NPN SILICON TRANSISTOR ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-x-TA3-T MJE13003G-x-TA3-T MJE13003L-x-TM3-T MJE13003G-x-TM3-T MJE13003L-x-TMS-T MJE13003G-x-TMS-T MJE13003L-x-TN3-R MJE13003G-x-TN3-R MJE13003L-x-T60-K MJE13003G-x-T60-K MJE13003L-x-T6C-A-K MJE13003G-x-T6C-A-K MJE13003L-x-T6C-K MJE13003G-x-T6C-K MJE13003L-x-T6S-K MJE13003G-x-T6S-K MJE13003L-x-T92-B MJE13003G-x-T92-B MJE13003L-x-T92-K MJE13003G-x-T92-K MJE13003L-x-T92-F-B MJE13003G-x-T92-F-B MJE13003L-x-T92-F-K MJE13003G-x-T92-F-K MJE13003L-x-T9N-B MJE13003G-x-T9N-B MJE13003L-x-T9N-K MJE13003G-x- T9N-K Note: Pin Assignment: B: Base C: Collector E: Emitter  Package TO-220 TO-251 TO-251S TO-252 TO-126 TO-126C TO-126C TO-126S TO-92 TO-92 TO-92 TO-92 TO-92NL TO-92NL Pin Assignment 1 2 3 B C E B C E B C E B C E B C E E C B B C E B C E E C B E C B B C E B C E E C B E C B Packing Tube Tube Tube Tape Reel Bulk Bulk Bulk Bulk Tape Box Bulk Tape Box Bulk Tape Box Bulk MARKING TO-220 / TO-251 / TO-251S / TO-252 TO-126 / TO-126C / TO-126S TO-92 TO-92NL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R204-004.T MJE13003  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS Collector-Emitter Voltage VCEO(SUS) 400 Collector-Base Voltage VCBO 700 Collector-Emitter Voltage (VBE=0) VCES 700 Emitter Base Voltage VEBO 9 Continuous IC 1.5 Collector Current Peak (1) ICM 3 Continuous IB 0.75 Base Current Peak (1) IBM 1.5 Continuous IE 2.25 Emitter Current Peak (1) IEM 4.5 TO-126/TO-126C 1.4 TO-126S TO-92/TO-92NL 1.1 TA=25°C TO-220 2 TO-251/TO-251S 1.56 TO-252 Power Dissipation PD TO-126/TO-126C 20 TO-126S TO-92/TO-92NL 1.5 TC=25°C TO-220 40 TO-251/TO-251S 25 TO-252 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT V V V V A A A W W W W W W W W °C °C 3 of 9 QW-R204-004.T MJE13003  NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS (Note) Collector-Emitter Sustaining Voltage SYMBOL VCEO(SUS) TC=25°C TC=100°C Collector Cutoff Current Emitter Cutoff Current SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with base reverse biased ON CHARACTERISTICS (Note) ICEO IEBO IC=10mA , IB=0 VCEO=Rated Value, VBE(OFF)=1.5 V VEB=9V, IC=0 MIN TYP MAX UNIT 400 V 1 5 1 Is/b See Fig.5 RBSOA See Fig.6 mA 14 5 fT COB IC=100mA, VCE=10V, f=1MHz VCB=10V, IE=0, f=0.1MHz 4 tD tR tS tF VCC=125V, IC=1A, B1=IB2=0.2A, tP=25μs, Duty Cycle≤1% 0.05 0.5 2 0.4 0.1 1 4 0.7 μs μs μs μs tSTG tC tF IC=1A, VCLAMP=300V, IB1=0.2A, VBE(OFF)=5VDC, TC=100°C 1.7 4 0.29 0.75 0.15 μs μs μs Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time Inductive Load, Clamped (Table 1) Storage Time Crossover Time Fall Time Note: Pulse Test: PW=300μs, Duty Cycle≤2% mA IC=0.5A, VCE=5V IC=1A, VCE=5V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=1A, IB=0.25A, TC=100°C IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1A, IB=0.25A, TC=100°C hFE1 hFE2 DC Current Gain  TEST CONDITIONS 57 30 0.5 1 3 1 1 1.2 1.1 10 21 V V MHz pF CLASSIFICATION OF hFE1 RANK RANGE A 14 ~ 22 B 21 ~ 27 C 26 ~ 32 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 31 ~ 37 E 36 ~ 42 F 41 ~ 47 G 46 ~ 52 H 51 ~ 57 4 of 9 QW-R204-004.T MJE13003 APPLICATION INFORMATION Table 1.Test Conditions for Dynamic Performance Resistive Switching Reverse Bias Safe Operating Area and Inductive Switching Test Circuits +125V Rc TUT RB SCOPE D1 Circuit Values -4.0V Coil Data : VCC=20V Ferroxcube core #6656 VCLAMP=300V Full Bobbin ( ~ 200 Turns) #20 VCC=125V RC=125Ω D1=1N5820 or Equiv. RC=47Ω GAP for 30 mH/2 A LCOIL=50mH Output Waveforms Test Waveforms  NPN SILICON TRANSISTOR +10.3 V 25μS 0 -8.5V tr, tf