MJE2955TL-TA3-T

UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 1 TO-220 1 1 TO-251  TO-220F1 TO-252 ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE2955TL-TA3-T MJE2955TG-TA3-T TO-220 MJE2955TL-TF1-T MJE2955TG-TF1-T TO-220F1 MJE2955TL-TM3-T MJE2955TG-TM3-T TO-251 MJE2955TL-TN3-R MJE2955TG-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E B C E B C E Packing Tube Tube Tube Tape Reel MJE2955TG-TA3-T (1)Packing Type (2)Package Type (3)Green Package  (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF1: TO-220F1, TM3: TO-251 TN3: TO-252 (3) G: Halogen Free and Lead Free, L: Lead Free MARKING UTC MJE2955T Lot Code L: Lead Free G: Halogen Free Date Code 1 www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 3 QW-R203-012.F MJE2955T  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector current Base Current TO-220 TO-220F1 Power Dissipation (TA=25°C) TO-251 TO-252 SYMBOL VCBO VCEO VEBO IC IB PD RATINGS -70 -60 -5 -10 -6 75 18 UNIT V V V A A W W 20 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°C ~70°C  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Baser-Emitter on Voltage DC Current Gain Current Gain Bandwidth Product SYMBOL BVCEO BVCBO BVEBO ICBO ICEO ICEX IEBO VCE(SAT)1 VCE(SAT)2 VBE(ON) hFE1 hFE2 fT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC=-200mA IC=-10mA IE=-10mA VCB=-70V VCE=-30V VCE=-70V, VEB(OFF)=-1.5V VEB=-5V IC=-4A, IB=-0.4A IC=-10A, IB=-3.3A VCE=-4V, IC=-4A IC=-4A, VCE=-4V IC=-10A, VCE=-4V VCE=-10V, IC=-0.5A, f=1MHz MIN -60 -70 -5 20 5 2 TYP MAX UNIT V V V -1 mA -700 A -1 mA -5 mA -1.1 V -8.0 -1.8 V 100 MHZ 2 of 3 QW-R203-012.F MJE2955T TYPICAL CHARACTERISTICS DC current Gain 1000 DC current gain, hFE VCE = -2V 100 10 1 -0.01 -1 -0.1 -10 Saturation voltage, VBE(SAT), VCE(sat) (V)  PNP SILICON TRANSISTOR Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 -1 IC = 10 IB VBE(sat) -0.1 VCE(sat) -0.01 -0.1 Power Derating 105 Power dissipatioan, PC (W) 1 5 ms D C ms µs 100 Collector current, IC (A) -100 -1 -0.1 -1 -100 Collector current, IC (A) Safe Operating Area -10 -10 -1 Collector current, IC (A) -10 -100 Collector-emitter voltage, VCE (V) 90 75 60 TO-220 45 30 TO-252 15 0 0 25 50 75 100 125 150 175 Case temperature, TC (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein . UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R203-012.F