MMBT1015L-BL-AC3-R

UNISONIC TECHNOLOGIES CO., LTD MMBT1015 LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1815 PNP SILICON TRANSISTOR 3 3 1 2 2 1 SOT-23 3 SOT-523 3 2 1 2 1 SOT-113 SOT-323 *Pb-free plating product number: MMBT1015L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT1015-x-AC3-R MMBT1015L-x-AC3-R MMBT1015-x-AE3-R MMBT1015L-x-AE3-R MMBT1015-x-AL3-R MMBT1015L-x-AL3-R MMBT1015-x-AN3-R MMBT1015L-x-AN3-R Package SOT-113 SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel Tape Reel MMBT1015L-x-AC3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel (2) AC3: SOT-113, AE3: SOT-23, AL3: SOT323, AN 3: SOT-523 (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn MARKING A4 Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-015,E MMBT1015 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SOT-23 Collector Dissipation SOT-523/SOT-113/SOT-323 Collector Current Base Current SYMBOL VCBO VCEO VEBO PC IC IB PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified ) RATINGS -50 -50 -5 250 200 -150 -50 UNIT V V V mW mW mA mA Junction Temperature TJ 125 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Output Capacitance Noise Figure SYMBOL BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) ICBO IEBO hFE1 hFE2 fT COB NF TEST CONDITIONS Ic = -100µA, IE = 0 Ic = -10mA, IB = 0 IE = -10µA, Ic = 0 Ic = -100mA, IB = -10mA Ic = -100mA, IB = -10mA VCB = -50V, IE = 0 VEB = -5V, Ic = 0 VCE = -6V, Ic = -2mA VCE = -6V, Ic = -150mA VCE = -10V, Ic = -1mA VCB = -10V, IE = 0, f = 1MHz Ic = -0.1mA, VCE = -6V RG= 1kΩ, f = 100Hz MIN -50 -50 -5 TYP MAX UNIT V V V -0.1 -0.3 V -1.1 V -100 nA -100 nA 700 MHz pF dB 120 25 80 4.0 0.5 7.0 6 CLASSIFICATION OF hFE1 RANK RANGE Y 120-240 GR 200-400 BL 350-700 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-015,E MMBT1015 TYPICAL CHARACTERISTICS Static Characteristics -50 3 10 PNP SILICON TRANSISTOR DC Current Gain Collector Current, Ic (mA) I B =- 3 0 0µ A -30 DC Current Gain, hFE -40 V CE =-6V 2 10 I B =- 2 5 0µ A I B =-2 0 0 µ A I B =- 1 5 0µ A -20 1 10 -10 I B =- 1 0 0µ A I B =-5 0 µ A 0 -0 -4 -8 -12 -16 -20 0 10 -1 -10 0 -10 1 -10 2 -10 3 -10 Collector-Emitter Voltage ( V) Collector Current , Ic (mA) Base-Emitter on Voltage 2 -10 1 -10 Saturation Voltage C ollector Current, Ic (mA) Ic=1 0* IB V CE =-6V 1 -10 Saturation Voltage (V) -10 0 V BE (S A T) 0 -10 -1 -10 V CE (S A T) -1 -10 0 -0. 2 -0. 4 -0.6 -0.8 -1. 0 -2 -10 -1 -10 0 -10 1 -10 2 -10 -10 3 Base-Emitter Voltage (V) Collector Current , Ic (mA) C urrent Gain-Bandwidth Product 3 10 Collector Output Capacitance 2 10 -1 -10 Curr ent Gain-Bandwidth T product,f (MHz) VCE =- 6V C apacitance, C ob (pF) 2 10 1 10 f=1 MH z I E =0 1 10 0 10 0 10 -1 10 -1 -10 0 -10 1 -10 2 -10 0 -10 1 -10 2 -10 3 -10 Collector Current , Ic (mA) Collector- Base Voltage (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-015,E MMBT1015 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-015,E