MMBT1616-G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching NPN SILICON TRANSISTOR 3 1 2 SOT-23 *Pb-free plating product number: MMBT1616L/MMBT16AL ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT1616-x-AE3-R MMBT1616L-x-AE3-R MMBT1616A-x-AE3-R MMBT1616AL-x-AE3-R Package SOT-23 SOT-23 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MMBT1616L-x-AE3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn MARKING UTC MMBT1616 UTC MMBT1616A 16 Lead Plating 16A Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-036.B MMBT1616/A ABSOLUTE MAXIMUM RATING PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter to Base Voltage Collector Current DC Pulse* 1616 1616A 1616 1616A SYMBOL VCBO VCEO VEBO IC IC PC TJ TSTG NPN SILICON TRANSISTOR RATINGS 60 120 50 60 6 1 2 350 +150 -55 ~ +150 Total Power Dissipation (Ta=25℃) Junction Temperature Storage Temperature Note (*) Pulse width≤10ms, Duty cycle