MMBT1815-BL-AN3-R

厂商：
UTC(友顺)
封装：
描述：
MMBT1815-BL-AN3-R - HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR - Unisonic Technologies

数据手册：

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MMBT1815-BL-AN3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD MMBT1815 HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1015 NPN SILICON TRANSISTOR 3 3 1 2 2 1 SOT-23 3 SOT-523 3 2 1 2 1 SOT-113 SOT-323 *Pb-free plating product number: MMBT1815L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT1815-x-AC3-R MMBT1815L-x-AC3-R MMBT1815-x-AE3-R MMBT1815L-x-AE3-R MMBT1815-x-AL3-R MMBT1815L-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AN3-R Package SOT-113 SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel Tape Reel MMBT1815L-x-AC3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel (2) AC3: SOT-113, AE3: SOT-23, AL3: SOT-323, AN 3: SOT-523 (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn MARKING C4 Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-014,F MMBT1815 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta=25°C) Collector Current Base Current SOT-23 SOT-523/SOT-113/SOT-323 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified ) SYMBOL VCBO VCEO VEBO PC IC IB RATINGS 60 50 5 250 200 150 50 UNIT V V V mW mW mA mA Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Output Capacitance Noise Figure SYMBOL VCE(SAT) VBE(SAT) ICBO IEBO hFE1 hFE2 fT COB NF TEST CONDITIONS Ic = 100mA, IB = 10mA Ic = 100mA, IB = 10mA VCB = 60V, IE = 0 VEB = 5V, Ic = 0 VCE = 6V, Ic = 2mA VCE = 6V, Ic = 150mA VCE = 10V,Ic = 50mA VCB = 10V, IE = 0, f = 1MHz Ic = -0.1mA, VCE = 6V RG = 10kΩ, f = 100Hz MIN TYP 0.1 MAX UNIT 0.25 V 1.0 V 100 nA 100 nA 700 MHz pF dB 120 25 80 2.0 1.0 3.0 1.0 CLASSIFICATION OF hFE1 RANK RANGE Y 120-240 GR 200-400 BL 350-700 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-014,F MMBT1815 TYPICAL CHARACTERISTICS Static Characteristics 100 3 10 NPN SILICON TRANSISTOR DC Current Gain Collector Current, Ic (mA) VCE =6 V 80 I B =3 0 0µ A 60 DC Current Gain, hFE 20 2 10 I B =2 5 0µ A 40 I B =2 0 0µ A I B =1 5 0µ A 1 10 20 I B =1 0 0µ A I B =5 0µ A 0 0 4 8 12 16 0 10 -1 10 0 10 1 10 2 10 3 10 Collector-Emitter Voltage ( V) Collector Current, Ic (mA) Base-Emitter On Voltage 2 10 4 10 Saturation Voltage Ic=1 0*I B Collector Current, Ic (mA) 1 10 V CE =6 V Saturation Voltage (mV) 3 10 ) VBE ( SAT 0 10 2 10 ) VCE ( SAT -1 10 0 0. 2 0.4 0.6 0. 8 1.0 1 10 -1 10 0 10 1 10 2 10 3 10 Base-Emitter Voltage (V) CollectorCurrent , Ic (mA) Current Gain-Bandwidth Product 3 10 10 2 Collector Output Capacitance Current Gain-bandw idth product,fT (MHz) V CE =6V 2 10 Capacitance, Cob (pF) 10 1 f=1MH z IE =0 1 10 10 0 0 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 Collector Current, Ic (mA) Collector Base Voltage (V) - UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-014,F MMBT1815 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-014,F

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MMBT1815-BL-AN3-R

1. 物料型号： - MMBT1815

2. 器件简介： - MMBT1815是一款高频NPN放大晶体管，具有以下特点： - 集电极-发射极电压：BVCEO=50V - 集电极电流高达150mA - 高hFE线性 - 与MMBT1015互补

3. 引脚分配： - SOT-113: E(1), B(2), C(3) - SOT-23: E(1), B(2), C(3) - SOT-323: E(1), B(2), C(3) - SOT-523: E(1), B(2), C(3)

4. 参数特性： - 绝对最大额定值： - 集电极-基极电压：VCBO=60V - 集电极-发射极电压：VCEO=50V - 发射极-基极电压：VEBO=5V - 集电极功耗（SOT-23）：Pc=250mW - 集电极功耗（SOT-523/SOT-113/SOT-323）：200mW - 集电极电流：Ic=150mA - 基极电流：IB=50mA - 结温：TJ=150°C - 存储温度：TSTG=-55~+150°C - 电特性（Ta=25°C）： - 集电极-发射极饱和电压：VCE(SAT)=0.1~0.25V - 基极-发射极饱和电压：VBE(SAT)=1.0V - 集电极截止电流：IcBO=100nA - 发射极截止电流：IEBO=100nA - DC电流增益：hFE1=120~700 - hFE2=25（在VCE=6V, Ic=150mA时） - 转换频率：fr=80MHz - 输出电容：CoB=2.0~3.0pF - 噪声系数：NF=1.0dB

5. 功能详解： - MMBT1815是一款NPN硅晶体管，具有高hFE线性，适用于高频放大应用。

6. 应用信息： - 该晶体管适用于高频放大应用，并且与MMBT1015互补。

7. 封装信息： - 该晶体管提供多种封装选项，包括SOT-113、SOT-23、SOT-323和SOT-523。

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