UNISONIC TECHNOLOGIES CO., LTD MMBT2222A
NPN GENERAL PURPOSE AMPLIFIER
NPN SILICON TRANSISTOR
3
2
FEATURES
* This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
1 SOT-23
3
2
1 SOT-523
*Pb-free plating product number:MMBT2222AL
ORDERING INFORMATION
Order Number Normal Lead Free Plating MMBT2222A-AE3-R MMBT2222AL-AE3-R MMBT2222A-AN3-R MMBT2222AL-AN3-R Package SOT-23 SOT-523 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel
MMBT2222AL-AE3-R
(1)Packing Type (2)Package Type (3)Lead Plating
(1) R: Tape Reel (2) AE3: SOT-23, AN3: SOT-523 (3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
1P
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PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO Ic
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified.)
RATINGS 75 40 6 0.6 SOT-23 350 Power Dissipation PC SOT-523 150 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: These are steady state limits. The factory should be consulted on applications involving pulsed or cycle operations. UNIT V V V A mW mW ℃ ℃ low duty
THERMAL DATA
PARAMETER Thermal Resistance, Junction to Ambient SOT-23 SOT-523 SYMBOL θJA RATINGS 15 833 UNIT °C/W °C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO IEBO IBL ICEO TEST CONDITIONS IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC =0 VCB=60V, IE=0 VCB=60V, IE=0, Ta=150°C VEB=3.0V, IC=0 VCE=60V, VEB(OFF)=3.0V VCE=60V, VEB(OFF)=3.0V IC =0.1mA, VCE=10V IC =1.0mA, VCE=10V IC =10mA, VCE=10V IC =10mA, VCE=10V, Ta= -55°C IC =150mA, VCE=10V* IC =150mA, VCE=1.0V* IC =500mA, VCE=10V* IC =150mA, IB=15mA IC =500mA, IB=50mA IC =150mA, IB=15mA IC =500mA, IB=50mA IC=20mA, VCB=20V, f=300MHz IC =20mA, VCE=20V, f=100MHz VCB=10V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz IC=20mA, VCB=20V, f=31.8MHz IC=100µA, VCE=10V, Rs=1.0kΩ f=1.0kHz 300 8.0 25 150 4.0 MIN 75 40 6 0.01 10 10 20 10 35 50 75 35 100 50 40 TYP MAX UNIT V V V µA µA nA nA nA
DC Current Gain
hFE
300
Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage*
VCE(SAT) VBE(SAT)
0.6
0.3 1.0 1.2 2.0 60
V V V V Ω MHz pF pF pS dB
SMALL SIGNAL CHARACTERISTICS Real Part of Common-Emitter High Re(hje) Frequency Input Impedance Transition Frequency fT Output Capacitance Cobo Input Capacitance Cibo Collector Base Time Constant rb'Cc Noise Figure NF
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ELECTRICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
SWITCHING CHARACTERISTICS Delay Time tD VCC=30V, VBE(OFF)=0.5V, Rise Time tR IC=150mA, IB1=15mA Storage Time tS Vcc=30V, IC=150mA Fall Time tF IB1= IB2=15mA *Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
10 25 225 60
ns ns ns ns
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TEST CIRCUITS
NPN SILICON TRANSISTOR
30V 200Ω 16V 0 ≤200ns 5 00Ω 1.0kΩ
FIG.1 Saturated Turn-On Switching Time
-15V 1KΩ 1.0kΩ ≤200ns 50 Ω
6.0V 37 Ω
3 0V 0
FIG.2 Saturated Turn-Off Switching Time
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TYPICAL CHARACTERISTICS
DC Current Gain v s. Collector Current
NPN SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs . Collector Current
V CE=5V
DC Current Gain, h FE
Collector-Emitter Voltage, VCE(SAT) (V)
500 400 300 125 ℃ 200 100 -40 ℃ 0 0.1 0.3 1 10 30 100 300 C ollector Current , I C (mA) 25 ℃
0.4 β=10 0.3 125 ℃ 25 ℃ 0.1 -40 ℃ 1 10 100 500
0.2
Collector Current , IC (mA)
Base-Emitter Saturation Voltage vs . Collector Current
Base-Emitter on Voltage vs. Collector Current
1
Base-Emitter on Voltage, VBE(ON) ( V)
Base-Emitter Voltage, VBE(SAT) ( V)
β=10
1
VCE=5V
0.8
0.8
-40 ℃ 25 ℃
-40 ℃ 25℃ 125 ℃
0.6
0.6
125 ℃
0.4
0.4 1 10 100 500
0.2 0.1 1 10 25 Collector Current , I C (mA)
Collector Current , IC (mA)
Base-Emitter Saturation Voltage vs. Collector Current 500 VCB=40V 20
Emitter Transition and Output Capacitance vs. Reverse Bias Voltage
Collector Current, ICBO (nA)
100
Capacitance (pF)
16 12 C te 8 4 C ob f=1MHz 1 10 100
10 1
0.1
25
50
75
100
125
150
0.1
Ambient Temperature , T A ( ℃)
Reverse Bias Voltage (V)
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TYPICAL CHARACTERISTICS(Cont.)
Turn on and Turn off Times vs. Collector Current 400 320
Time (ns)
NPN SILICON TRANSISTOR
Switching Times vs. Collector Current 400 IC IB1=IB2 10 = =25V V
CC
IC I B1=IB2 10 = =25V VCC
Time (ns)
320 240 160 80 0
240 160 80 tON 0 10 100 Collector Current , IC (mA) 1000 t OFF
tS tR tF tD 10 100 Collector Current , I C (mA) 1000
Power Dissipation vs. Ambient Temperature 1
Power Dissipation ，PC (W)
0.75
0.25 0
0
25
50
75
100
125
150
Temperature (℃ )
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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