MMBT2907AL-AE3-6-R

MMBT2907AL-AE3-6-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    MMBT2907AL-AE3-6-R - PNP GENERAL PURPOSE AMPLIFIER - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT2907AL-AE3-6-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD MMBT2907A PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. PNP EPITAXIAL PLANAR TRANSISTOR 3 2 1 SOT-23 3 1 SOT-323 2 *Pb-free plating product number: MMBT2907AL ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT2907A-AE3-6-R MMBT2907AL-AE3-6-R MMBT2907A-AL3-6-R MMBT2907AL-AL3-6-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKING 2F www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R220-001,B MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATING (NOET 1) (Ta=25℃ unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO -60 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -800 mA ℃ Operating Junction and Storage Temperature TJ, TSTG -55 ~ +150 Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Case SOT-23 SOT-323 SYMBOL BVCEO BVCBO BVEBO IB ICEX ICBO SYMBOL θJA RATINGS 357 455 MIN -60 -60 -5 -50 -50 -0.02 -20 75 100 100 100 50 TYP UNIT °C/W °C/W MAX UNIT V V V nA nA μA μA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS IC=-0.1mA, VCE=-10V IC=-1.0 mA, VCE=-10V IC=-10 mA, VCE=-10V IC=-150 mA, VCE=-10V* IC=-500 mA, VCE=-10V* IC=-150 mA, IB=-15mA IC=-500 mA, IB=-50mA IC=-150 mA, IB=-15mA* IC=-500 mA, IB=-50mA IC=-50mA, VCE=-20V, f=100MHz VCB=-10V, IE=0, f=100kHz VEB=-2V, IC=0, f=100kHz TEST CONDITIONS IC=-10mA, IB=0 IC=-10μA, IE=0 IE=-10μA , IC=0 VCB=-30V, VEB=-0.5V VCE=-30V, VBE=-0.5V VCB=-50V, IE=0 VCB=-50V, IE=0, TA=150℃ DC Current Gain hFE 300 -0.4 -1.6 -1.3 -2.6 V V V V MHz pF pF ns ns ns ns ns ns mW mW Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain – Bandwidth Product Output Capacitance Input Capacitance SWITCHING CHARACTERISTICS Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time THERMAL CHARACTERISTICS Total Device Dissipation VCE(SAT) VBE(SAT) fT Cobo Cibo tON td tr toff ts tf PD 200 8 30 45 10 40 100 80 30 350 275 VCC=30V, IC=-150mA, IB1=-15mA VCC=6V, IC=-150mA, IB1= IB2=-15mA SOT-23 SOT-323 * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0% Note: Device mounted on FR-4 PCB 1.6” x 1.6” x 0.06.” UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R220-001,B MMBT2907A TEST CIRCUIT PNP EPITAXIAL PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R220-001,B MMBT2907A Collector Current, ICBO (nA) Base-Emitter Voltage, VBESAT (V) Typical Pulsed Current Gain, hFE TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD Base-Emitter On Voltage, VBE(ON) (V) Collector-Emitter Voltage, VCESAT (V) www.unisonic.com.tw PNP EPITAXIAL PLANAR TRANSISTOR Capacitance (pF) QW-R220-001,B 4 of 6 MMBT2907A TYPICAL CHARACTERISTICS(Cont.) PNP EPITAXIAL PLANAR TRANSISTOR Time (ns) -50 -20 -10 -5 Rise Time vs Collector And Turn On Base Currents tr=15V 30ns -2 60ns -1 0 -100 Collector Current, IC (mA) -500 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time (ns) 5 of 6 QW-R220-001,B MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR TYPICAL COMMON EMITTER CHARACTERISTICS (f=1kHz) Char.Relative To Voltage At IC=10mA UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. Char.Relative To Voltage At TA=25℃ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Common Emitter Characteristics 6 of 6 QW-R220-001,B
MMBT2907AL-AE3-6-R
1. 物料型号: - 标准型号:MMBT2907A - 无铅镀层产品型号:MMBT2907AL

2. 器件简介: - MMBT2907A是一款PNP型外延平面晶体管,设计用途为通用放大器和开关,能够承受高达500mA的集电极电流。

3. 引脚分配: - SOT-23封装:E(发射极)、B(基极)、C(集电极) - SOT-323封装:E(发射极)、B(基极)、C(集电极)

4. 参数特性: - 集电极-发射极电压:VCEO -60V - 集电极-基极电压:VCBO -60V - 发射极-基极电压:VEBO -5V - 集电极电流-连续:-800mA - 工作结与存储温度:-55~+150℃

5. 功能详解: - 该晶体管具备在不同集电极电流下的DC电流增益hFE,以及在不同集电极电流下的饱和电压VCE(SAT)和VBE(SAT)。 - 小信号特性包括电流增益-带宽积fr和输出电容Cobo、输入电容Cibo。 - 开关特性包括开通时间和关断时间等。

6. 应用信息: - 适用于需要PNP型晶体管作为放大器和开关的场合,尤其是在需要承受较大集电极电流的应用中。

7. 封装信息: - 提供SOT-23和SOT-323两种封装类型。 - 无铅镀层产品型号为MMBT2907AL,适用于环保要求较高的应用。
MMBT2907AL-AE3-6-R 价格&库存

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