MMBT3904-AE3-R

MMBT3904-AE3-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    MMBT3904-AE3-R - GENERAL PURPOSE APPLIATION - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT3904-AE3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD MMBT3904 GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906 NPN SILICON TRANSISTOR *Pb-free plating product number: MMBT3904L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT3904-AE3-R MMBT3904L-AE3-R MMBT3904-AL3-R MMBT3904L-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MMBT3904L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-323 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-012,B MMBT3904 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( Ta=25℃, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 350 mW ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector Cut-off Current ICEX VCE=30V, VEB=3V Base Cut-off Current IBL VCE=30V, VEB=3V Collector-base breakdown voltage VCBO IC=10μA, IE=0 Collector-emitter breakdown voltage (note) VCEO IC=1mA, IB=0 Emitter-base breakdown voltage VEBO IE=10μA, IC=0 hFE1 VCE=1V, IC=0.1mA hFE2 VCE=1V, IC=1mA DC current gain (note) hFE3 VCE=1V, IC=10mA hFE4 VCE=1V, IC=50mA hFE5 VCE=1V, IC=100mA VCE(SAT)1 IC=10mA, IB=1mA Collector-emitter saturation voltage (note) VCE(SAT)2 IC=50mA, IB=5mA Base-emitter saturation voltage (note) Current gain bandwidth product Output Capacitance Turn on time VBE(SAT)1 VBE(SAT)2 fT Cob tON MIN TYP MAX UNIT 50 nA 50 nA 60 V 40 V 6 V 40 70 100 300 60 30 0.2 V 0.3 0.85 0.95 4 70 250 V V V MHz pF ns ns Turn off time tOFF Note: Pulse test: PW
MMBT3904-AE3-R
### 物料型号 - MMBT3904-AE3-R:SOT-23封装,有铅镀层 - MMBT3904L-AE3-R:SOT-23封装,无铅镀层 - MMBT3904-AL3-R:SOT-323封装,有铅镀层 - MMBT3904L-AL3-R:SOT-323封装,无铅镀层

### 器件简介 MMBT3904是一款NPN硅晶体管,具有以下特点: - 集电极-发射极电压:$V_{CEO}=40 ~V$ - 集电极耗散功率:$P_{D}(MAX)=350 ~mW$ - 与UTC MMBT3906互补

### 引脚分配 - SOT-23封装:1(发射极E),2(基极B),3(集电极C) - SOT-323封装:1(发射极E),2(基极B),3(集电极C)

### 参数特性 - 最大额定值: - 集电极-基极电压:$VCBO=60V$ - 集电极-发射极电压:$VCEO=40V$ - 发射极-基极电压:$VEBO=6V$ - 集电极电流:$Ic=200mA$ - 集电极耗散:$Pc=350mW$ - 结温:$TJ=+150℃$ - 存储温度:$TSTG=-55~+150℃$

- 电气特性($Ta=25℃$): - 集电极截止电流:$ICEX=50nA$ - 基极截止电流:$IBL=50nA$ - 集电极-基极击穿电压:$VCBO=60V$ - 集电极-发射极击穿电压:$VCEO=40V$ - 发射极-基极击穿电压:$VEBO=6V$ - DC电流增益:$hFE$(不同条件下的值) - 集电极-发射极饱和电压:$VCE(SAT)$ - 基极-发射极饱和电压:$VBE(SAT)$ - 电流增益带宽积:$fT=300MHz$ - 输出电容:$Cob=4pF$ - 导通时间:$toN=70ns$ - 关闭时间:$toFF=250ns$

### 功能详解 MMBT3904是一款通用目的的NPN硅晶体管,适用于多种电子电路,特别是在需要低功耗和较高电压承受能力的场合。

### 应用信息 该晶体管适用于一般电子设备中的放大和开关应用,特别是在需要低功耗和较高电压承受能力的场合。

### 封装信息 - SOT-23:小型表面贴装封装 - SOT-323:另一种小型表面贴装封装,适用于自动贴装
MMBT3904-AE3-R 价格&库存

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