MMBT3904G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906  ORDERING INFORMATION Ordering Number Note:  MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904G-AN3-R Pin Assignment: E: Emitter B: Base Package SOT-23 SOT-323 SOT-523 C: Collector Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel MARKING 1A.G www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-012.G MMBT3904  NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL VCBO VCEO VEBO VCE(SAT)1 Collector-Emitter Saturation Voltage (Note) VCE(SAT)2 VBE(SAT)1 Base-Emitter Saturation Voltage (Note) VBE(SAT)2 Collector Cut-Off Current ICEX Base Cut-Off Current IBL hFE1 hFE2 DC Current Gain (Note) hFE3 hFE4 hFE5 Current Gain Bandwidth Product fT Output Capacitance COB Turn On Time tON Turn Off Time tOFF Note: Pulse test: PW