MMBT4401-AE3-R

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. NPN SILICON TRANSISTOR 3 2 1 SOT-23 *Pb-free plating product number: MMBT4401L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT4401-AE3-R MMBT4401L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBT4401L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 2X www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R206-035,B MMBT4401 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING* (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 600 mA 350 mW Total Device Dissipation PD mW/℃ Derate above 25℃ 2.8 Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA (Ta=25℃, unless otherwise specified) CHARACTERISTIC Thermal Resistance, Junction to Ambient PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (note) Emitter-Base Breakdown Voltage Collector Cut-off Current Base Cut-off Current ON CHARACTERISTICS (note) SYMBOL BVCBO BVCEO BVEBO ICEX IBL hFE1 hFE2 hFE3 hFE4 hFE5 SYMBOL θJA TEST CONDITIONS IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCE=35V, VEB=0.4V VCE=35V, VEB=0.4V RATING 357 MIN 60 40 6 TYP UNIT ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) MAX UNIT V V V µA µA DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE(SAT1) IC=150mA, IB=15mA VCE(SAT2) IC=500mA, IB=50mA VBE(SAT1) IC=150mA, IB=15mA VBE(SAT2) IC=500mA, IB=50mA fT Ccb Ceb hie hre hfe hoe tD tR tS tF VCC=30V, IC=150mA IB1= IB2=15mA VCE=10V, IC=20mA, f=100MHz VCB=5V, IE=0, f=140kHz VBE=0.5V, IC=0, f=140kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCC=30V, VEB=2V IC=150mA IB1=15mA VCC=30V, VEB=2V IC=150mA IB1=15mA 20 40 80 100 40 300 0.4 0.75 0.95 1.2 V V V V MHz pF pF kΩ -4 ×10 µmhos ns ns ns ns 0.75 250 SMALL SIGNAL CHARACTERISTICS1 Current Gain Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1 0.1 40 1 6.5 30 15 8 500 30 15 20 225 30 Note: Pulse test: PulseWidth≤300µs, Duty Cycle≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R206-035,B MMBT4401 TEST CIRCUIT 30V 200Ω 16V 0 ≤220ns NPN SILICON TRANSISTOR 1KΩ 500Ω Figure1. Saturated Turn-On Switching Timer -1.5V 6V Note:BVEBO =5V 30V 0 ≤220ns 1k 1KΩ 50Ω 37 Ω Figure2. Saturated Turn-Off Switching Timer UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R206-035,B MMBT4401 TYPICAL CHARACTERISTICS Typical Pulsed Current Gain vs Collector Current VCE =5V 400 300 200 100 125℃ NPN SILICON TRANSISTOR Typical Pulsed Current Gain, hFE 500 Collector-Emitter Voltage, VCESAT (V) Collector-Emitter Saturation Voltage vs Collector Current 0.4 β=10 125℃ 0.2 25℃ 0.1 -40 ℃ 1 10 100 Collector Current, IC (mA) 500 0.3 25℃ -40℃ 0 0 .1 0.3 1 3 10 30 100 300 Collector Current, IC (mA) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter Voltage, VBESAT (V) 1 β=10 -40℃ Base-Emitter OnVoltage, VBEON (V) 1 Base-Emitter On Voltage vs Collector Current VCE =5V -40℃ 25℃ 0.8 0.6 0.8 0.6 25 ℃ 125℃ 125℃ 0.4 0.2 0.1 0.4 1 10 100 Collector Current, I C (mA) 500 1 10 Collector Current, I C (mA) 25 500 Collector Current, ICBO (nA) Collector-Cutoff Current vs Ambient Temperature VCB=40V Capacitance (pF) Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 16 Cte 12 8 4 Cob f=1MHz 100 10 1 0.1 25 50 75 100 125 150 Ambient Temperature, T A(℃) 0.1 1 10 Reverse Bias Voltage (V) 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R206-035,B MMBT4401 TYPICAL CHARACTERISTICS(Cont.) Turn On and Turn Off Times vs Collector Current IC I B1=I B2= 10 VCC =25V Time (ns) Time (ns) NPN SILICON TRANSISTOR 400 320 240 160 80 400 320 Switching Times vs Collector Current I B1=I B2= VCC =25V IC 10 240 160 80 tD 0 10 100 1000 Collector Current, I C (mA) tS tR t off ton 100 1000 Collector Current, IC (mA) tF 0 10 1 Power Dissipation vs Ambient Temperature Common Emitter Characteristics 8 0.75 Char.Relative To Voltage At I C=10mA Power Dissipation, PD (W) 6 VCE =10V T A=25℃ f=1kHz hoe hre 0.5 SOT-23 4 0 .25 2 0 hfe hie 30 40 50 10 20 Collector Current IC (mA) , 0 25 75 100 125 150 50 Temperature (℃) 0 60 Char.Relative To Voltage at TA=25℃ 2.4 2 1.6 1.2 0.8 0.4 0 0 VCE =10V I C=10mA f=1kHz Char.Relative To Voltage at VCE=10V Common Emitter Characteristics hre hie hfe hoe 40 60 80 100 20 Ambient Temperature, TA (°C) 1.3 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0 Common Emitter Characteristics T A=25℃ I C=10mA f=1kHz hfe hie hre hoe 5 10 15 20 25 30 Collector Voltage, VCE (V) 35 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R206-035,B MMBT4401 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R206-035,B