MMBT5401

UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc(max)=350mW *High current gain 2 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free MMBT5401-AE3-R MMBT5401L-AE3-R Package SOT-23 Packing Tape Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., 1 QW-R206-011.C MMBT5401 PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage DC Collector Current Power Dissipation Operating Temperature Storage Temperature PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS -160 -150 -5 -600 350 +150 -40 ~ +150 UNIT V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob NF TEST CONDITIONS IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-120V, IE=0 VBE=-3V, Ic=0 VCE=-5V, Ic=-1mA VCE=-5V, Ic=-10mA VCE=-5V, Ic=-50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, Ic=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz IC=-0.25mA, VCE=-5V RS=1kΩ, f=10Hz ~ 15.7kHz MIN -160 -150 -6 TYP MAX UNIT V V V nA nA -50 -50 80 80 80 400 -0.2 -0.5 1 1 400 6.0 8 V V MHz pF dB 100 Note: Pulse test: PW