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MMBT5551G-B-AE3-R

MMBT5551G-B-AE3-R

  • 厂商:

    UTC(友顺)

  • 封装:

    SOT-23

  • 描述:

    高压开关晶体管 SOT23

  • 数据手册
  • 价格&库存
MMBT5551G-B-AE3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.  2 1 SOT-23 FEATURES (JEDEC TO-236) * High Collector-Emitter Voltage: VCEO=160V * High current gain  ORDERING INFORMATION Ordering Number Note:  MMBT5551G-x-AE3-R Pin Assignment: E: Emitter B: Base Package SOT-23 C: Collector Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-010. I MMBT5551  NPN SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO 180 V Collector -Emitter Voltage VCEO 160 V Emitter -Base Voltage VEBO 6 V DC Collector Current IC 600 mA Power Dissipation PD 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction to Ambient Junction to Case  SYMBOL θJA θJC RATINGS 357 104 ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage VCBO IC=100A, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=1mA, IB=0 Emitter-Base Breakdown Voltage VEBO IE=10μA, IC=0 Collector Cut-off Current ICBO VCB=120V, IE=0 Emitter Cut-off Current IEBO VBE=4V, IC =0 VCE=5V, IC =1mA DC Current Gain(note) hFE VCE=5V, IC =10mA VCE=5V, IC =50mA IC=10mA, IB=1mA Collector-Emitter Saturation Voltage VCE(SAT) IC=50mA, IB=5mA IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(SAT) IC=50mA, IB=5mA Current Gain Bandwidth Product fT VCE=10V, IC =10mA, f=100MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz IC=0.25mA, VCE=5V Noise Figure NF RS=1kΩ, f=10Hz ~ 15.7kHz Note: Pulse test: PW
MMBT5551G-B-AE3-R 价格&库存

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MMBT5551G-B-AE3-R
    •  国内价格
    • 1+0.14930

    库存:1067

    MMBT5551G-B-AE3-R
      •  国内价格
      • 20+0.13986
      • 200+0.11081
      • 600+0.09461

      库存:193

      MMBT5551G-B-AE3-R
        •  国内价格
        • 1+0.09300
        • 100+0.08680
        • 300+0.08060
        • 500+0.07440
        • 2000+0.07130
        • 5000+0.06944

        库存:0