UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
3
DESCRIPTION
The UTC MMBT5551 is a high voltage fast-switching NPN
power transistor. It is characterized with high breakdown voltage,
high current gain and high switching speed.
2
1
SOT-23
FEATURES
(JEDEC TO-236)
* High Collector-Emitter Voltage: VCEO=160V
* High current gain
ORDERING INFORMATION
Ordering Number
Note:
MMBT5551G-x-AE3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-010. I
MMBT5551
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
180
V
Collector -Emitter Voltage
VCEO
160
V
Emitter -Base Voltage
VEBO
6
V
DC Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
357
104
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO
IC=100A, IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=10μA, IC=0
Collector Cut-off Current
ICBO
VCB=120V, IE=0
Emitter Cut-off Current
IEBO
VBE=4V, IC =0
VCE=5V, IC =1mA
DC Current Gain(note)
hFE
VCE=5V, IC =10mA
VCE=5V, IC =50mA
IC=10mA, IB=1mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=50mA, IB=5mA
IC=10mA, IB=1mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=50mA, IB=5mA
Current Gain Bandwidth Product
fT
VCE=10V, IC =10mA, f=100MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
IC=0.25mA, VCE=5V
Noise Figure
NF
RS=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW
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