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MMBT9013

MMBT9013

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    MMBT9013 - 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION - Unisonic Technolog...

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT9013 数据手册
UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 2 1 MARKING 3 13 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR *Pb-free plating product number: MMBT9013L ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Pc Tj TSTG RATING 40 20 5 500 225 150 -55 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(on) TEST CONDITIONS Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, Ic=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V,Ic=50mA VCE=1V,Ic=500mA Ic=500mA, IB=50mA Ic=500mA, IB=50mA VCE=1V, Ic=10mA MIN 40 20 5 TYP MAX UNIT V V V nA nA 64 40 0.6 120 120 0.16 0.91 0.67 100 100 300 0.6 1.2 0.7 V V V UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R206-021,A UTC MMBT9013 CLASSIFICATION OF hFE1 RANK RANGE D 64-91 NPN EPITAXIAL SILICON TRANSISTOR E 78-112 F 96-135 G 112-166 H 144-202 I 190-300 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R206-021,A
MMBT9013
物料型号: - UTC MMBT9013

器件简介: - NPN EPITAXIAL SILICON TRANSISTOR,用于1W输出功率的便携式收音机中的B类推挽操作放大器。 - 特点包括高总功率耗散(625mW)、高集电极电流(500mA)、出色的hFE线性以及与UTC MMBT9012互补。

引脚分配: - 1: EMITTER(发射极) - 2: BASE(基极) - 3: COLLECTOR(集电极)

参数特性: - 绝对最大额定值(Ta=25°C): - 集电极-基极电压:VCBO 40V - 集电极-发射极电压:VCEO 20V - 发射极-基极电压:VEBO 5V - 集电极电流:Ic 500mA - 集电极耗散:Pc 225mW - 结温:Tj 150°C - 储存温度:TSTG -55~+150°C

功能详解: - 电气特性(Ta=25°C): - 集电极-基极击穿电压:BVCBO 40V - 集电极-发射极击穿电压:BVCEO 20V - 发射极-基极击穿电压:BVEBO 5V - 集电极截止电流:ICBO 100nA - 发射极截止电流:IEBO 100nA - DC电流增益:hFE1 64-300 - hFE2 40-120 - 集电极-发射极饱和电压:VCE(sat) 0.16-0.6V - 基极-发射极饱和电压:VBE(sat) 0.91-1.2V - 基极-发射极导通电压:VBE(on) 0.6-0.7V

应用信息: - 该晶体管适用于1W输出功率的便携式收音机中的B类推挽操作。

封装信息: - Pb-free电镀产品型号:MMBT9013L
MMBT9013 价格&库存

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