MMBTA06

UNISONIC TECHNOLOGIES CO., LTD MMBTA06 AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW NPN SILICON TRANSISTOR 1 2 SOT-23 *Pb-free plating product number: MMBTA06L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTA06-AE3-R MMBTA06L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBTA06L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 1G www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-041,B MMBTA06 ABSOLUTE MAXIMUM RATINGS (TA=25℃) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 4 V Collector Current - Continuous IC 500 mA 350 mW Total Device Dissipation(Note 1) PD 2.8 mW/℃ Derate Above 25℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. Device mounted on FR-4=1.6×1.6×0.06 in 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Junction to Ambient SYMBOL θJA MAX 357 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS DC Current Gain SYMBOL BVCEO BVEBO ICES ICBO hFE TEST CONDITIONS IC=1.0mA, IB=0 IE=100µA, Ic=0 VCE=60V, IB=0 VCB=80V, IE=0 IC=10mA, VCE=1V IC=100mA, VCE=1V IC=100mA, IB=10mA IC=100mA, VCE=1V MIN 80 4 0.1 0.1 100 100 0.25 1.2 100 V V MHz TYP MAX UNIT V V µA µA Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter on Voltage VBE(ON) SMALL-SIGNAL CHARACTERISTICS IC=10mA, VCE=2V, Current Gain Bandwidth Product fT (Note2) f=100MHz Note 1: Pulse test: PW≤300µs, Duty Cycle≤2% 2: fT is defined as the frequency at which IhfeI extrapolates to unity. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R206-041,B MMBTA06 SWITCHING TIME TEST CIRCUITS NPN SILICON TRANSISTOR TURN-ON TIME -1.0V VCC +40V 5 .0µs TURN-OFF TIME +VBB VCC +40V OUTPUT CS＜6.0pF 100 VIN 5.0µF 5.0µs 100 VIN 5.0µF RB 100 RL RL OUTPUT CS ＜6.0pF +10V 0 t r=3.0ns RB 100 t r=3.0ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R206-041,B MMBTA06 TYPICAL CHARACTERISTICS 300 Current-Gain Bandwidth Product, fT (MHz) NPN SILICON TRANSISTOR C urrent -Gain Bandwidth Product Capacitance 80 60 T J=25℃ Capacitance, C (pF) 200 VCE=2.0V TJ=25℃ 100 70 50 30 2.0 3.0 5.0 7.010 20 30 50 70 100 200 Collector Current, IC (mA) 40 Cibo 20 C obo 10 8.0 6.0 4.0 0.1 0.2 0.5 10 20 5.0 10 20 50 100 Reverse Voltage, VR (V) 1.0K 700 500 Switching Time Active-Region Safe Operating Area 1.0K 700 500 1.0ms T C=25 ℃ 1.0s 100µs Collector Current, IC (mA) Time, t (ns) 300 200 100 70 50 ts 300 200 tf VCC=40V 30 IC/I B=10 tr 20 IB1 =IB2 T =25℃ td @VBE(off) =0.5V 10 J 5.0 7.0 10 20 30 50 70100 300 500 Collector Current IC (mA) , 100 TA=25 ℃ 70 50 MMBTA05 30 20 MMBTA06 Current Limit Thermal Limit Second Breakdown Limit 10 1.0 2.0 3.0 5.07.010 20 30 50 70100 Collector-Emitter Voltage, VCE (V) DC Current Gain 400 TJ=125℃ VCE=1.0V 1.0 0.8 “ON ” Voltages T J=125℃ VBE(SAT)@I C/IB=10 DC Current Gain, h FE 25℃ Voltage, V 200 0.6 VBE(ON) @VCE=1.0V 0.4 0.2 VCE(SAT)@IC/I B=10 100 80 60 -55℃ 40 0.5 1.0 2.0 3.0 5.010 20 30 50100200300500 Collector Current, IC (mA) 0 0.5 1.0 2.0 5.0 10 20 50 100 200 500 Collector Current, I C (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R206-041,B MMBTA06 TYPICAL CHARACTERISTICS(Cont.) Collector Saturation Region Collector-Emitter Voltage, VCE (V) Temperature Coefficient, RθVB (mV/ ℃) NPN SILICON TRANSISTOR 1.0 TJ=125℃ 0.8 0.6 0.4 0.2 0 IC=10mA 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 Collector Current IC (mA) , IC=50 mA I C=100 IC=250 I C=500 mA mA mA Base-Emitter Temperature Coefficient -0.8 -1.2 -1.6 RθVB for VBE -2.0 -2.4 -2.8 0.5 1.0 2.0 5.0 10 20 50 100200 500 Collector Current IC (mA) , UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R206-041,B