MMBTA14

UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc (mas) = 350 mW 2 1 MARKING 3 1N SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Tc=25°C) Collector Current Junction Temperature Storage Temperature SYMBOL VCBO VCES VEBO Pc Ic Tj TSTG VALUE 30 30 10 350 500 150 -55 ~ +150 UNIT V V V mW mA °C °C ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter on Voltage Current Gain Bandwidth Product Pulse test: Pulse Width