MMBTA42-AE3-R

MMBTA42-AE3-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    MMBTA42-AE3-R - HIGH VOLTAGE TRANSISTOR - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBTA42-AE3-R 数据手册
UNISONIC TECHNOLOGIES CO.,LTD. MMBTA42 HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 1 3 NPN EPITAXIAL SILICON TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=300V *High current gain *Power Dissipation: PD (max) =350mW 2 SOT-23 MARKING * Pb-free plating product number: MMBTA42L PIN CONFIGURATION 1D PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free MMBTA42-AE3-R MMBTA42L-AE3-R Package SOT-23 Packing Tape Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD. 1 QW-R206-004.B MMBTA42 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic PD TJ TSTG NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) RATINGS 300 300 6 500 350 +150 -40 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) Current Gain Bandwidth Product Collector Base Capacitance SYMBOL BVCBO BVCEO BVEBO VCE(sat) VBE(sat) ICBO IEBO hFE fT Ccb TEST CONDITIONS Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, Ic=0 Ic=20mA, IB=2mA Ic=20mA, IB=2mA VCB=200V, IE=0 VBE=6V, Ic=0 VCE=10V, Ic=1mA VCE=10V, Ic=10mA VCE=10V, Ic=30mA VCE=20V, Ic=10mA, f=100MHz VCB=20V, IE=0, f=1MHz MIN 300 300 6 TYP MAX UNIT V V V V V nA nA 0.2 0.90 100 100 80 80 80 50 300 3 MHz pF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R206-004.B MMBTA42 TYPICAL CHARACTERISTICS DC Current Gain 10 DC Current Gain , HFE 3 NPN EPITAXIAL SILICON TRANSISTOR Saturation Voltage 10 1 VCE =10V VCE (s at) , VBE (s at ) (V) Ic =10×I B 102 10 0 VBE (sat) 101 10-1 VCE (sat) 10 0 10 0 10-2 10 1 10 2 10 -1 10 0 10 1 102 10 3 Collector Current, Ic (mA) Collector Current Ic (mA) , Capacitance Current Gain Bandwidth Product (MHz) 102 IE =0 f=1MHz 10 3 Current Gain Bandwidth Product VCE=20V 10 1 10 2 -1 10 10 0 10 1 10 2 101 10 0 101 Collector Current Ic (mA) , 102 Collector-Base Voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R206-004.B
MMBTA42-AE3-R
物料型号: - 标准型号:MMBTA42 - 无铅镀层产品型号:MMBTA42L

器件简介: - MMBTA42是高电压晶体管,设计用于电话交换和高电压开关。

引脚分配: - 1号引脚:发射极(Emitter) - 2号引脚:基极(Base) - 3号引脚:集电极(Collector)

参数特性: - 集电极-发射极电压:$V_{CEO}=300V$ - 集电极电流:$Ic=500mA$ - 功率耗散:$P_{D(max)}=350mW$ - 结温:$TJ=+150°C$ - 存储温度:$TSTG=-40~+150°C$

功能详解: - 该晶体管具有高电流增益和高耐压特性,适用于需要高电压开关的应用场合。

应用信息: - 适用于电话交换和高电压开关等应用。

封装信息: - 封装类型:SOT-23 - 标准和无铅封装的包装方式均为胶带卷装(Tape Reel)
MMBTA42-AE3-R 价格&库存

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