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MMBTA42G-AE3-R

MMBTA42G-AE3-R

  • 厂商:

    UTC(友顺)

  • 封装:

    SOT23-3

  • 描述:

    MMBTA42G-AE3-R

  • 数据手册
  • 价格&库存
MMBTA42G-AE3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD MMBTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch.  3 FEATURES 2 * Collector-Emitter voltage: VCEO=300V(MMBTA42) * Collector-Emitter voltage: VCEO=200V(MMBTA43) * High current gain * Collector Dissipation: Pc (max) =350mW  SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Note:  1 MMBTA42G-AE3-R MMBTA43G-AE3-R Pin Assignment: E: Emitter Package SOT-23 SOT-23 C: Collector B: Base Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKING MMBTA42 MMBTA43 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-004.G MMBTA42/43  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 300 Collector-Base Voltage VCBO V 200 300 Collector-Emitter Voltage VCEO V 200 Emitter-Base Voltage VEBO 6 V Collector Dissipation (Ta=25°C) PC 350 mW Collector Current IC 500 mA Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied MMBTA42 MMBTA43 MMBTA42 MMBTA43  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER MMBTA42 Collector-Base Breakdown Voltage MMBTA43 Collector-Emitter Breakdown MMBTA42 Voltage MMBTA43 Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage MMBTA42 Collector Cut-Off Current MMBTA43 MMBTA42 Emitter Cut-Off Current MMBTA43 DC Current Gain MMBTA42 MMBTA43 IC=100A, IE=0 BVCEO IC =1mA, IB=0 BVEBO VCE(SAT) VBE(SAT) IE=100A, IC =0 IC =20mA, IB=2mA IC =20mA, IB=2mA VCB=200V, IE=0 VCB=160V, IE=0 VEB=6V, IC =0 VEB=4V, IC =0 VCE=10V, IC =1mA VCE=10V, IC =10mA VCE=10V, IC =30mA VCE=20V, IC=10mA f =100MHz ICBO IEBO fT Ccb UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS BVCBO hFE Current Gain Bandwidth Product Collector Base Capacitance SYMBOL VCB=20V, IE=0, f=1MHz MIN 300 200 300 200 6 TYP MAX V V 0.2 0.90 100 100 100 100 80 80 80 UNIT V V V nA nA 300 50 MHz 3 4 pF 2 of 4 QW-R206-004.G MMBTA42/43 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS 100 Ta=-50°C 50 20 10 5 2 1 1 2 IC/IB=10 1.6 1.4 1.2 1.0 Ta=150°C 0.8 Ta=25°C 0.6 0.4 0.2 0.0 Ta=-50°C Base Emitter Voltage, VBE(ON) (V) Collector to Emitter Saturation Voltage, VCE(SAT) (V) 5 10 20 50 100 200 500 Collector Current, IC (mA) Collector Emitter Saturation vs. Collector Current 2.0 1.8 DC Current Gain vs. Output Current 1K DC Current Gain, hFE (Normalized) DC Current Gain vs. Output Current 1K V =5V CE 500 Ta=150°C Ta=25°C 200 DC Current Gain, hFE (Normalized)  100 Ta=-50℃ 20 10 5 2 1 1 10.0 5 10 20 50 100 200 500 Collector Current, IC (mA) Collector Emitter Saturation vs. Collector Current 1.0 VCE=5V 0.9 Ta=-50°C 0.8 0.7 0.6 Ta=25°C 0.5 0.4 0.3 Ta=150°C 0.2 0.1 1 0.1 10 100 Power Derating Power Dissipation vs. Case Temperature 400 Power Dissipation, Pc (mW) 100.0 2 Collector Current, IC (mA) VCE=5V Ta=25°C Ta=25℃ 50 0.0 Current Gain Bandwidth Product Current Gain Bandwidth Product (MHz) Ta=150℃ 200 5 10 20 50 100 200 500 Collector Current, IC (mA) 1 2 1000.0 VCE=10V 500 350 300 250 200 150 100 50 0 2 4 6 8 10 12 14 16 18 20 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) 3 of 4 QW-R206-004.G MMBTA42/43 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-004.G
MMBTA42G-AE3-R 价格&库存

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MMBTA42G-AE3-R
  •  国内价格
  • 20+0.31920
  • 100+0.26360
  • 300+0.17050
  • 800+0.13880
  • 3000+0.09260

库存:0