MMBTA44

UNISONIC TECHNOLOGIES CO.,LTD. MMBTA44/45 HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW 3 NPN EPITAXIAL SILICON TRANSISTOR 1 2 MARKING (MMBTA44) SOT-23 3D * Pb-free plating product number: MMBTA44L/MMBTA45L PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free MMBTA44-AE3-R MMBTA44L-AE3-R MMBTA45-AE3-R MMBTA45L-AE3-R Package SOT-23 SOT-23 Packing Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD. 1 QW-R206-007.B MMBTA44/45 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Ta=25°C Tc=25°C MMBTA44 MMBTA45 MMBTA44 MMBTA45 NPN EPITAXIAL SILICON TRANSISTOR SYMBOL VCBO VCEO VEBO Ic PD TJ TSTG RATINGS 500 400 400 350 6 300 350 1.5 +150 -40 ~ +150 UNIT V V V mA mW W °C °C ELECTRICAL CHARACTERISTICS (Tj =25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown MMBTA44 Voltage MMBTA45 Collector-Emitter Breakdown MMBTA44 Voltage MMBTA45 Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage MMBTA44 Collector Cut-off Current MMBTA45 MMBTA44 Collector Cut-off Current MMBTA45 Emitter Cut-off Current DC Current Gain(Note) SYMBOL BVCBO BVCEO BVEBO VCE(sat) VBE(sat) ICBO ICES IEBO hFE TEST CONDITIONS Ic=100µA, IB=0 Ic=1mA, IB=0 IE=100µA, Ic=0 Ic=1mA, IB=0.1mA Ic=10mA, IB=1mA Ic=50mA, IB=5mA Ic=10mA, IB=1mA VCB=400V, IE =0 VCB=320V, IE =0 VCE =400V, IB=0 VCE =320V, IB=0 VEB=4V, Ic=0 VCE =10V, Ic=1mA VCE =10V, Ic=10mA VCE =10V, Ic=50mA VCE =10V, Ic=100mA VCE =20V, Ic=10mA f=100MHz VCB=20V, IE =0, f=1MHz MIN 500 400 400 350 6 TYP MAX UNIT V V V 0.4 0.5 0.75 0.75 0.1 0.1 0.5 0.5 0.1 40 50 45 40 50 7 240 V V µA µA µA Current Gain Bandwidth Product Output Capacitance Note: Pulse test: PW