MMBTA44G-AE3-R

厂商：
UTC(友顺)
封装：
SOT-23
描述：
通用三极管 VCE=400V VEBO=6V IV=300mA Pd=350mW

数据手册：

下载MMBTA44G-AE3-R.pdf

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详情介绍
数据手册
价格&库存

MMBTA44G-AE3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS  FEATURES 3 *Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number Note:  MMBTA44G-AE3-R MMBTA45G-AE3-R Pin Assignment: E: Emitter Package SOT-23 SOT-23 C: Collector B: Base Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKINGS MMBTA44 MMBTA45 www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd. 1 of 4 QW-R206-007.F MMBTA44/45  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT 500 V Collector-Base Voltage VCBO 400 V 400 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA TA=25°C 350 mW Power Dissipation PD TC=25°C 1.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. MMBTA44 MMBTA45 MMBTA44 MMBTA45  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER MMBTA44 Collector-Base Breakdown Voltage MMBTA45 Collector-Emitter Breakdown MMBTA44 Voltage MMBTA45 Emitter-Base Breakdown Voltage SYMBOL BVCBO IC=100μA, IB=0 BVCEO IC =1mA, IB=0 BVEBO IE=100μA, IC =0 IC =1mA, IB=0.1mA IC =10mA, IB=1mA IC =50mA, IB=5mA IC 10mA, IB=1mA VCB=400V, IE =0 VCB=320V, IE =0 VCE =400V, IB=0 VCE =320V, IB=0 VEB=4V, IC =0 VCE =10V, IC =1mA VCE =10V, IC =10mA VCE =10V, IC =50mA VCE =10V, IC =100mA VCE =20V, IC =10mA f=100MHz VCB=20V, IE =0, f=1MHz Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage MMBTA44 Collector Cut-off Current MMBTA45 MMBTA44 Collector Cut-off Current MMBTA45 Emitter Cut-off Current VBE(SAT) DC Current Gain (Note) Current Gain Bandwidth Product Output Capacitance Note: Pulse test: PW

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MMBTA44G-AE3-R

物料型号为 MMBTA44/45，是NPN硅晶体管，具有高电压特性。

器件简介包括其主要特征，如MMBTA44的集电极-发射极电压为400V，MMBTA45为350V，集电极电流高达300mA，与MMBTA94/93互补，最大功率耗散为350mW。

引脚分配为SOT-23封装，其中1脚为发射极(E)，2脚为基极(B)，3脚为集电极(C)。

参数特性包括绝对最大额定值和电气特性，如集电极-基极电压、集电极-发射极电压、发射极-基极电压、集电极电流、功耗、结温和存储温度。

功能详解涉及直流电流增益、存储时间、电容等。

应用信息未在文档中明确说明，但根据其特性，可能适用于需要高电压和大电流的开关或放大应用。

封装信息为SOT-23，符合JEDEC TO-236标准。

MMBTA44G-AE3-R 价格&库存

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