UNISONIC TECHNOLOGIES CO., LTD MMBTA92
HIGH VOLTAGE PNP TRANSISTOR
DESCRIPTION
The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.
PNP SILICON TRANSISTOR
3
1
FEATURES
* High Collector-Emitter voltage: VCEO=-300V * Collector Dissipation: PC(MAX)=350mW
2 SOT-23
*Pb-free plating product number: MMBTA92L
ORDERING INFORMATION
Order Number Normal Lead Free Plating MMBTA92-AE3-R MMBTA92L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel
MMBTA92L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
2D
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QW-R206-005,B
MMBTA92
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25℃ Tc=25℃ Derate Above 25℃ SYMBOL VCBO VCEO VEBO IC PC
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
RATINGS -300 -300 -5 -500 350 1.5 12 UNIT V V V mA mW W mW/℃
Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=-100µA, IC=0 Collector Cut-Off Current ICBO VCB=-200V, IE=0 Emitter Cut-Off Current IEBO VEB=-3V, IC=0 VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA DC Current Gain (Note) hFE VCE=-10V, IC=-30mA Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-20mA, IB=-2mA Base-Emitter Saturation Voltage VBE(SAT)1 IC=-20mA, IB=-2mA VCE=-20V, IC=-10mA, Current Gain Bandwidth Product fT f=100MHz Collector Base Capacitance Ccb VCB=-20V, IE=0, f=1MHz Note: Pulse test: PW
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