MMBTA92G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR  3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.  2 1 SOT-23 FEATURES (JEDEC TO-236) * High Collector-Emitter voltage: VCEO= -300V * Collector Dissipation: PC(MAX)=350mW  ORDERING INFORMATION Ordering Number Note:  MMBTA92G-AE3-R Pin Assignment: E: Emitter Package B: Base SOT-23 C: Collector Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-005.E MMBTA92  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA TA=25°C 350 mW PC Collector Dissipation TC=25°C 1.5 W Derate Above Ta >25°C 12 mW/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO TEST CONDITIONS IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 VCE=-10V, IC=-1mA DC Current Gain (Note) hFE VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-20mA, IB=-2mA Base-Emitter Saturation Voltage VBE(SAT)1 IC=-20mA, IB=-2mA Current Gain Bandwidth Product fT VCE=-20V, IC=-10mA, f=100MHz Collector Base Capacitance Ccb VCB=-20V, IE=0, f=1MHz Note: Pulse test: PW