MMBTH10L-C-AE3-C-R

UNISONIC TECHNOLOGIES CO., LTD MMBTH10 RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. NPN SILICON TRANSISTOR *Pb-free plating product number: MMBTH10L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTH10-x-AE3-C-R MMBTH10L-x-AE3-C-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING 3E www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-003,E MMBTH10 ABSOLUTE MAXIMUM RATING (Ta=25℃) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation Collector current SYMBOL VCBO VCEO VEBO PC IC NPN SILICON TRANSISTOR RATINGS 30 25 3 225 50 UNIT V V V mW mA Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100μA Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Base Breakdown Voltage BVEBO IE=10μA Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400μA Base-Emitter on Voltage VBE(ON) VCE=10V, IC=4mA Collector Cut-off Current ICBO VCB=25V Emitter Cut-off Current IEBO VEB=2V DC Current Gain hFE VCE=10V, IC=4mA Output Capacitance Cob VCB=10V, f=1MHZ Current Gain Bandwidth Product fT VCE=10V, IC=4mA, f=100MHz MIN 30 25 3 TYP MAX UNIT V V V mV mV nA nA pF MHz 500 950 100 100 60 0.7 650 CLASSIFICATION OF hFE RANK RANGE A 60-100 B 90-130 C 120-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R206-003,E MMBTH10 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Base Emitter On Voltage, VBE(ON)(V) Base Emitter Voltage, VBE(SAT) (V) Collector-Emitter Voltage, VCE(SAT) (V) Typical Pulsed Current Gain, hFE 10 Collector Current, ICBO (nA) VCB=30V Power Dissipation, PD (mW) Collector-Cutoff Current Vs Ambient Temperature 350 300 250 200 150 100 50 0 0 Power Dissipation Vs Ambient Temperautre 1 0.1 25 50 75 100 125 150 25 50 75 100 125 150 Ambient Temperature, TA (℃) Temperature (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R206-003,E MMBTH10 TYPICAL CHARACTERISTICS(Cont.) Output Admittance, |Yob| (mmhos) NPN SILICON TRANSISTOR Input Admittance, |Yib| (mmhos) Forward Admittance, |Yfb| (mmhos) Reverse Admittance, |Yrb| (mmhos) Input Admittance, |Yie| (mmhos) 24 20 16 12 Output Admittance, |Yoe| (mmhos) Input Admittance VCE=10V Ic=2mA gie Output Admittance 6 5 4 boe 3 2 1 goe 0 0 200 500 1000 VCE=10V Ic=2mA bie 8 4 0 0 200 500 1000 Frequency, f (MHz) Frequency, f (MHz) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R206-003,E MMBTH10 TYPICAL CHARACTERISTICS(Cont.) Forward Transfer Admittance gfe VCE=10V Ic=2mA NPN SILICON TRANSISTOR 60 40 20 0 -20 -40 -60 100 1.2 1 0.8 Reverse Transfer Admittance VCE=10V Ic=2mA -bre 0.6 0.4 bfe 200 500 1000 0.2 0 -gre 0 200 500 1000 Frequency, f (MHz) Frequency, f (MHz) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R206-003,E