UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MPSA13 is a Darlington transistor.
1
FEATURES
*Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc (mas) = 625 mW
SOT-89
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation Collector Current Junction Temperature Storage Temperature
SYMBOL
VCBO VCES VEBO Pc Ic Tj TSTG
VALUE
30 30 10 625 500 150 -55 ~ +150
UNIT
V V V mW mA °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter on Voltage Current Gain Bandwidth Product Pulse test: Pulse Width
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