MPSA92

UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High Collector-Emitter voltage: VCEO=-300V(UTC MPSA92) VCEO=-200V(UTC MPSA93) *Collector Dissipation: Pc(max)=625mW 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER Collector-Base Voltage UTC MPSA92 UTC MPSA93 Collector-Emitter Voltage UTC MPSA92 UTC MPSA93 Emitter-Base Voltage Collector Dissipation (Ta=25°C) Derate Above 25℃ Collector Current Collector Dissipation (Tc=25°C) Derate Above 25℃ Junction Temperature Storage Temperature VCBO -300 -200 V VCEO VEBO Pc Ic Pc Tj TSTG -300 -200 -5 625 5 -500 1.5 12 150 -55 ~ +150 SYMBOL VALUE UNIT V V mW mW/℃ mA W mW/℃ °C °C ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage UTC MPSA92 UTC MPSA93 Collector-Emitter Breakdown Voltage UTC MPSA92 UTC MPSA93 Emitter-Base Breakdown Voltage Collector Cut-Off Current UTC MPSA92 UTC MPSA93 SYMBOL BVCBO TEST CONDITIONS Ic=-100µA, IE=0 MIN -300 -200 TYP MAX UNIT V BVCEO Ic=-1mA, IB=0 -300 -200 -5 -0.25 -0.25 V V µA BVEBO ICBO IE=-100µA, Ic=0 VCB=-200V, IE=0 VCB=-160V, IE=0 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-019,A UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR PARAMETER Emitter Cut-Off Current DC Current Gain(note) SYMBOL IEBO hFE TEST CONDITIONS VEB=-3V, Ic=0 VCE=-10V, Ic=-1mA VCE=-10V, Ic=-10mA VCE=-10V, Ic=-30mA Ic=-20mA, IB=-2mA Ic=-20mA, IB=-2mA VCE=-20V, Ic=-10mA, f=100MHz VCB=-20V, IE=0 f=1MHz MIN 60 80 80 TYP MAX UNIT -0.10 µA Collector-Emitter Saturation Voltage VCE(sat)1 Base-Emitter Saturation Voltage VBE(sat)1 Current Gain Bandwidth Product fT Collector Base Capacitance Ccb UTC MPSA92 UTC MPSA93 Note:Pulse test: PW