MPSA92M

UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc(max)=625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG RATING -300 -300 -6 625 -800 150 -55 ~ +150 UNIT V V V mW mA °C °C ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain(note) SYMBOL BVCBO BVCEO BVCES BVEBO ICBO ICES IEBO hFE TEST CONDITIONS Ic=-100µA,IE=0 Ic=-1mA,IB=0 Ic=-100µA,VBE=0 IE=-100µA,Ic=0 VCB=-300V,IE=0 VCB=-300V,VBE=0 VEB=-4V,Ic=0 VCE=-10V,Ic=-1mA VCE=-10V,Ic=-10mA VCE=-10V,Ic=-100mA VCE=-10V,Ic=-200mA Ic=-30mA,IB=-1mA Ic=-100mA,IB=-10mA Ic=-10mA,IB=-1mA VCB=-20V,IE=0, f=1MHz MIN -300 -300 -300 -5 TYP MAX UNIT V V V V nA µA nA -100 -1 100 60 80 80 40 300 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Output capacitance Cob Note:Pulse test:PW