MPSA94

UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD(MAX)=625mW * Low collector-Emitter saturation voltage SOT-89 1 TO-92 *Pb-free plating product number: MPSA94L ORDERING INFORMATION Order Number Normal Lead Free Plating MPSA94-AB3-F-R MPSA94-AB3-F-R MPSA94-T92-C-B MPSA94-T92-C-B MPSA94-T92-C-K MPSA94-T92-C-K Package SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C Packing Tape Reel Tape Box Bulk MPSA94L-AB3-F-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) refer to Pin Assignment (3) T92: TO-92, AB3: SOT-89 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-021,B MPSA94 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified) UNIT V V V TO-92 mW Collector Power Dissipation(Ta=25℃) PD SOT-89 W Collector Current IC mA ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO RATINGS -400 -400 -6 625 0.5 -300 ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current TEST CONDITIONS IC=-100µA, IE=0 IC=-1mA, IB=0 IC=-100µA, VBE=0 IE=-100µA, IC=0 VCB=-300V, IE=0 VCB=-400V, VBE=0 VEB=-4V, IC=0 VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA DC Current Gain(note) hFE VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA IC=-10mA, IB=-1mA Collector-Emitter Saturation Voltage VCE(SAT) Ic=-50mA, IB=-5mA Base-Emitter Saturation Voltage VBE(SAT) IC=-10mA, IB=-1mA Output Capacitance Cob VCB=-20V, IE=0, f=1MHz Note: Pulse test: PW