MPSH10A

UTC MPSH10 A RF TRANSISTOR DESCRIPTION NPN EPITAXIAL SILICON TRANSISTOR The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation Collector current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG RATINGS 30 25 3 350 50 150 -55 ~ +150 UNIT V V V mW mA °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter on voltage DC current gain Output capacitace Current gain bandwidth product SYMBOL TEST CONDITIONS MIN 30 25 TYP MAX UNIT V V V nA nA mV mV pF MHZ BVCBO Ic=100µA BVCEO Ic=1mA BVEBO IE=10µA ICBO VCB=25V IEBO VEB=2V VCE(SAT) IC=4mA,IB=400µA VBE(ON) VCE=10V,IC=4mA hFE VCE=10V,IC=4mA Cob VCB=10V,f=1MHZ fT VCE=10V,IC=4mA,f=100MHZ 3 100 100 500 950 60 0.7 650 CLASSIFICATION OF hFE RANK RANGE A 60-100 B 90-130 C 120 -200 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-065,A UTC MPSH10 A Typical Characteristics hFE - TYPICAL PULSED CURRENT GAIN NPN EPITAXIAL SILICON TRANSISTOR Collector-Emitter Saturation Voltage vs Collector Current β=10 Typical Pulsed Current Gain vs Collector Current VCE=5V 80 60 40 20 0 0.1 125℃ 25℃ -40℃ VCESAT - COLLECTOR-EMITTER VOLTAGE(V) 100 0.2 0.15 125℃ 0.1 25℃ 0.05 -40℃ 0.2 0.5 1 2 5 10 20 50 Ic - COLLECTOR CURRENT (mA) 0.1 1 10 Ic - COLLECTOR CURRENT (mA) 20 VBE(ON) - BASE EMITTER ON VOLTAGE(V) VBESAT - BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 1 10 Ic - COLLECTOR CURRENT (mA) 20 -40℃ 25℃ 125℃ β=10 Base - Emitter ON Voltage vs Collector Current 1 VCE=5V 0.8 25℃ 0.6 125℃ -40℃ 0.4 0.2 0.01 0.1 1 10 100 Ic - COLLECTOR CURRENT (mA) ICBO - COLLECTOR CURRENT (nA) 10 VCB=30V PD - POWER DISSIPATION (mW) Collector-Cutoff Current vs Ambient Temperature Power Dissipation vs Ambient Temperautre 350 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE (℃) 125 150 1 0.1 25 125 50 75 100 TA - AMBIENT TEMPERATURE (℃) 150 UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-065,A UTC MPSH10 A Yib - INPUT ADMITTANCE (mmhos) 120 80 40 0 -40 -80 -120 0 bib VCE=10V Ic=5mA NPN EPITAXIAL SILICON TRANSISTOR Yob - OUTPUT ADMITTANCE (mmhos) 12 10 8 6 4 2 0 100 200 500 bob gob VCE=10V Ic=5mA Output Admittance Input Admittance gib 200 500 1000 1000 f - FREQUENCY (MHz) f - FREQUENCY (MHz) Yfb - FORWARD ADMITTANCE (mmhos) Yrb -REVERSE ADMITTANCE (mmhos) 120 80 40 0 Forward Transfer Admittance 8 bfb Reverse Transfer Admittan VCE=10V Ic=5mA 6 4 -brb 2 -grb 0 0 500 200 f - FREQUENCY (MHz) 1000 gfb -40 -80 0 200 500 f - FREQUENCY (MHz) VCE=10V Ic=5mA 1000 -120 24 20 16 12 VCE=10V Ic=2mA Yoe - OUTPUT ADMITTANCE (mmhos) Yie - INPUT ADMITTANCE (mmhos) Input Admittance Output Admittance 6 5 4 3 2 1 goe 0 0 200 500 f - FREQUENCY (MHz) 1000 boe VCE=10V Ic=2mA gie bie 8 4 0 0 200 500 f - FREQUENCY (MHz) 1000 UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R201-065,A UTC MPSH10 A Yfe - FORWARD ADMITTANCE (mmhos) 60 40 20 0 -20 -40 -60 100 bfe gfe NPN EPITAXIAL SILICON TRANSISTOR Yre - REVERSE ADMITTANCE (mmhos) 1.2 1 0.8 0.6 0.4 0.2 0 0 -gre 500 200 f - FREQUENCY (MHz) 1000 Reverse Transfer Admittance VCE=10V Ic=2mA VCE=10V Ic=2mA Forward Transfer Admittance -bre 200 500 f - FREQUENCY (MHz) 1000 Test Circuits 2.0kΩ 10kΩ Vcc=12V 1000pF 1000pF 0.8-10pF 100pF L2 T1 2.0pF 0.8-10pF L1-L3 turns No.16 wire,1/2 inch Lx 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No.14 wire,1 inch Lx inch ID T1 - Pri.1 turn No.16 wire Sec.1 turn No.18 wire Input 50kΩ 1000pF L1 TUM 5.0-18pF 1000pF 680Ω 1000pF VBB FIGURE 1:Neutralized 200 MHz PG and NF Circuit 50pF (NOTE 2) 175pF 500mHz Output into 50Ω RFC 1000pF 2.2kΩ (NOTE 1) 1000pF NOTE 1:2 turns No.16 AW G wire,3/8 inch OD,11/4 inch long NOTE 2:9 turns No,22 AW G wire,3/16 inch OD,1/2 inch long RFC -Vee Vcc FIGURE 2:500 MHz Oscillator Circuit UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R201-065,A UTC MPSH10 A Test Circuits NPN EPITAXIAL SILICON TRANSISTOR 2.0kΩ 10kΩ Vcc=12V 1000pF 1000pF 0.8-10pF 100pF L2 T1 2.0pF 0.8-10pF L1-L3 turns No.16 wire,1/2 inch Lx 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No.14 wire,1 inch Lx inch ID T1 - Pri.1 turn No.16 wire Sec.1 turn No.18 wire Input 50kΩ 1000pF L1 TUM 5.0-18pF 1000pF 680Ω 1000pF VBB FIGURE 1:Neutralized 200 MHz PG and NF Circuit 50pF (NOTE 2) 175pF 500mHz Output into 50Ω RFC 1000pF (NOTE 1) 1000pF NOTE 1:2 turns No.16 AW G wire,3/8 inch OD,11/4 inch long NOTE 2:9 turns No,22 AW G wire,3/16 inch OD,1/2 inch long RFC -Vee Vcc FIGURE 2:500 MHz Oscillator Circuit UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 5 QW-R201-065,A