P1856-AA3-R

UNISONIC TECHNOLOGIES CO., LTD UP1856 HIGH CURRENT TRANSISTOR PNP SILICON TRANSISTOR FEATURES * High current switching * Low VCE(SAT) * High hFE 1 SOT-223 *Pb-free plating product number: UP1856L ORDERING INFORMATION Order Number Normal Lead Free Plating UP1856-AA3-R UP1856L-AA3-R Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel UP1856L-AA3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AA3: SOT-223 (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R207-014,B UP1856 ABSOLUTE MAXIMUM RATING PNP SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current IC(PEAK) -5 A Continuous Collector Current IC -2 A Power Dissipation at Ta=25°C PD 1 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage(Note) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain (Note) SYMBOL BVCEO BVCBO BVEBO VCE(SAT) VBE(SAT) VBE(ON) ICBO IEBO hFE1 hFE2 hFE3 hFE4 fT TEST CONDITIONS IC= -10mA, IB=0 (Note) IC= -0.1mA, IE=0 IE= -0.1mA, IC=0 IC= -100mA, IB= -10mA IC= -1A, IB= -100mA IC= -2A, IB=-400mA IC=-2A, IB=-400mA IC=-2A, VCE=-5V (Note) VCB=-200V, IE=0 VEB=-6V, IC=0 IC=-10mA, VCE=-5V IC=-1A, VCE=-5V IC=-2A, VCE=-5V IC=-5A, VCE=-5V IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V MIN -200 -220 -6 TYP -240 -300 -8 -30 -120 -168 -970 -810 UNIT V V V -50 mV -165 mV -275 mV -1110 mV -950 mV -50 nA -10 nA 300 MAX 100 100 50 200 200 150 10 110 32 67 1140 Transition Frequency MHz pF ns ns Output Capacitance Cob Turn-on Time tON Turn-off Time tOFF Note: Pulsed test: duty cycle ≤ 2%, tP =300µsec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R207-014,B UP1856 TYPICAL CHARACTERISTICS PNP SILICON TRANSISTOR Base-Emitter Saturation, VBE(SAT) ( V) Collector-Emitter Saturation Voltagevs. Collector Current Collector-Emitter Saturation Voltage, VCE(SAT) (V) Base-Emitter Saturation vs. Collector Current 1.6 1.2 0.8 0.4 IC/I B=10 -55℃ +25℃ +100℃ 1.6 1.2 0.8 0.4 0 IC/I B=10 -55℃ +25℃ +150℃ 0.00 1 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 Collector Current, IC (A) Collector Current , IC (A) DC Current Gain vs. Collector Current Base-Emitter Turn-on Voltage, V BE(ON) (V) Base-Emitter Turn-on Voltage vs Collector Current 1.6 1.2 0.8 0.4 VCE=1V -55℃ +25℃ +100℃ +100℃ 300 DC Current Gain, hFE +25℃ 200 -55℃ 100 VCE=1V 0.001 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 C ollector Current , IC (A) Collector Current IC (A) , UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R207-014,B