UNISONIC TECHNOLOGIES CO., LTD
PZTA42/43
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC PZTA42/43 are high voltage transistors, designed for
telephone switch and high voltage switch.
FEATURES
1
* Collector-emitter voltage: VCEO=300V (UTC PZTA42)
VCEO=200V (UTC PZTA43)
* High current gain
* Complement to UTC PZTA92/93
* Collector power dissipation: PC(MAX)=1W
SOT-223
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
PZTA42L-AA3-R
PZTA42G-AA3-R
SOT-223
PZTA43L-AA3-R
PZTA43G-AA3-R
SOT-223
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
PZTA42G-AA3-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AA3: SOT-223
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
PZTA42
PZTA42
L: Lead Free
G: Halogen Free
PZTA43
PZTA43
Date Code
1
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
L: Lead Free
G: Halogen Free
Date Code
1
1 of 3
QW-R207-005.F
PZTA42/43
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
300
V
Collector-Base Voltage
VCBO
200
V
300
V
Collector-Emitter Voltage
VCEO
200
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
500
mA
Collector Power Dissipation
Pc
1
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PZTA42
PZTA43
PZTA42
PZTA43
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
BVCBO
Collector-Emitter Breakdown Voltage
BVCEO
Emitter-Base Breakdown Voltage
BVEBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
VCE(SAT)
VBE(SAT)
fT
CCB
TEST CONDITIONS
PZTA42
IC =100μA, IE=0
PZTA43
PZTA42
IC =1mA, IB=0
PZTA43
IE=100μA, IC =0
VCB=200V, IE=0
PZTA42
VCB=160V, IE=0
PZTA43
VBE=6V, IC =0
PZTA42
VBE=4V, IC =0
PZTA43
VCE=10V, IC =1mA
VCE=10V, IC =10mA
VCE=10V, IC 30mA
IC =20mA, IB=2mA
IC =20mA, IB=2mA
VCE=20V, IC =10mA, f=100MHz
PZTA42
VCB=20V, IE=0, f=1MHz
PZTA43
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
300
200
300
200
6
TYP
MAX
100
100
100
100
80
80
80
UNIT
V
V
V
V
V
nA
nA
nA
nA
300
0.2
0.90
50
3
4
V
V
MHz
pF
pF
2 of 3
QW-R207-005.F
PZTA42/43
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain
Saturation Voltage
101
Ic=10*IB
VCE(SAT), VBE(SAT) (V)
VCE=10V
102
101
100 0
10
101
Collector Current, Ic (mA)
Capacitance
102
IE=0
f=1MHz
101
10-1
100
101
102
Collector-Base Voltage (V)
VBE(SAT)
100
10-1
VCE(SAT)
10-2 -1
10
102
Current Gain Bandwidth Product (MHz)
DC current Gain, hFE
103
100
101
102
Collector Current, Ic (mA)
103
Current Gain Bandwidth Product
103
VCE=20V
102
101 0
10
101
Collector Current, Ic (mA)
102
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein .
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R207-005.F
很抱歉,暂时无法提供与“PZTA42G”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+0.85472
- 50+0.69142
- 150+0.60977
- 500+0.54854