TF2123G-E3-AQ3-R

UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS (ON), low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone applications.  FEATURES *Suited for use in audio, telephone capacitor microphones. *Good voltage characteristic. *Good transient characteristic. ORDERING INFORMATION Ordering Number Package TF2123G-xx-AE3-R TF2123G-xx-AN3-R TF2123G-xx-AQ3-R Note: Pin Assignment: S: Source D: Drain TF2123L-xx-AE3-R  SOT-23 SOT-523 SOT-723 Pin Assignment 1 2 3 S D G S D G S D G Packing Tape Reel Tape Reel Tape Reel G: Gate (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23, AN3: SOT-523, AQ3: SOT-723 (3)Rank (3) xx: refer to CLASSIFICATION OF IDSS (4)Green Package (4) G: Halogen Free and Lead Free MARKING TF2123-E3 TF2123-E4 E3 E4 TF2123-E5 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-106.C TF2123  N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS ( TA=25°С, unless otherwise specified ) PARAMETER Gate Drain Voltage Gate Current Drain Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VGDO IG ID PD TJ TSTG RATING -20 10 10 100 150 -55~+150 UNIT V mA mA mW °С °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER Gate Drain Breakdown Voltage Gate Source Cut off Voltage Zero-Gate Voltage Drain Current Drain Current SYMBOL BVGDO VGS(OFF) IDSS ID Forward Transfer Admittance Input Capacitance lyfsl CISS Voltage Gain GV Delta Voltage Gain Frequency Characteristic ∆GV ∆GV(f) Output Noise Voltage VNO Total Harmonic distortion THD  TEST CONDITIONS IG=-100μA VDS=2V, ID=1μA TF2123-E3 VDS=2V, VGS=0V TF2123-E4 TF2123-E5 IDSS=100μA VDD=2V, RL=2.2kΩ, IDSS=250μA Cg=5pF IDSS=350μA VDS=2V, VGS=0V VDS=2, VGS=0, f=1MHz IDSS=100μA VDD=2V, RL=2.2kΩ, Cg=5pF, f=1kHz, IDSS=250μA VIN=10mV IDSS=350μA VIN=10mV, RL=2.2kΩ, Cg=5pF, f=1kH, VDD=2V to1.5V VIN=10mV, RL=2.2kΩ, Cg=5pF, VDD=2V, f=1kHz to 110kHz RL=1kΩ VDD=2V, Cg=5pF, A-curve filter RL=2.2kΩ VDD=2V, RL=2.2kΩ, Cg=5pF, f=1kHz, VIN=50mV MIN -20 100 150 210 TYP MAX UNIT V -0.38 V 170 μA 270 μA 350 μA 98 μA 244 μA 337 μA 1.43 mS 5.0 pF 0.1 dB 1.95 dB 2.25 dB -0.5 dB -0.2 dB -107 -102 dB dB 0.9 % CLASSIFICATION OF IDSS RANK RANGE E3 100-170 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw E4 150-270 E5 210-350 2 of 4 QW-R206-106.C TF2123  N-CHANNEL JFET TEST CIRCUIT(TA=25C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-106.C TF2123  N-CHANNEL JFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-106.C