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TIP127L-T60-K

TIP127L-T60-K

  • 厂商:

    UTC(友顺)

  • 封装:

    TO-126

  • 描述:

    TIP127L-T60-K

  • 数据手册
  • 价格&库存
TIP127L-T60-K 数据手册
UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR  DESCRIPTION 1 1 The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications.  TO-220 EQUIVALENT TEST (R1 ≈8kΩ, R2 ≈0.12kΩ) TO-220F 1 C TO-252 B 1 1 TO-126 R1 TO-126S R2 E  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free TIP127L-TA3-T TIP127G-TA3-T TO-220 TIP127L-TF3-T TIP127G-TF3-T TO-220F TO-252 TIP127L-TN3-T TIP127G-TN3-T TIP127L-T60-K TIP127G-T60-K TO-126 TIP127L-T6S-K TIP127G-T6S-K TO-126S Note: Pin assignment: E: Emitter B: Base C: Collector  Pin Assignment 1 2 3 B C E B C E B C E E C B E C B Packing Tube Tube Tape Reel Bulk Bulk MARKING TO-220 / TO-220F / TO-252 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd TO-126 / TO-126S 1 of 4 QW-R203-005.J TIP127  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TC= 25°C, unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage DC Collector Current Pulse SYMBOL VCBO VCEO VEBO IC ICP RATINGS -100 -100 -5 -5 -8 UNIT V V V A A TO-220 TO-220F TO-252 TO-126/TO-126S 65 W 34 W Power Dissipation PD 38 W 36 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently. Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector-Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain SYMBOL BVCEO ICBO ICEO IEBO VCE(SAT)1 VCE(SAT)2 VBE(ON) hFE UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC=-10mA VCB=-100V VCE=-50V VEB=-5V IC=-3A, IB=-12mA IC=-5A, IB=-20mA VCE=-3V, IC=-3A VCE=-3V , IC=-500mA VCE=-3V , IC=-3A MIN TYP MAX UNIT -100 V -200 uA -500 uA -2 mA -2 V -4 V -2.5 V 1000 1000 2 of 4 QW-R203-005.J TIP127  TYPICAL CHARACTERISTICS Power Dissipation vs. Case Temperature 80 Power Dissipation, PD (W) PNP SILICON TRANSISTOR TO-220 60 40 TO-126 TO-220F 20 0 0 20 40 60 80 100 120 140 160 Case Temperature, TA (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-005.J TIP127 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-005.J
TIP127L-T60-K 价格&库存

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