UF630G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET  1 1 1 TO-220F1 TO-220F2 FEATURES * RDS(ON) < 0.4Ω@ VGS = 10V, ID = 5A * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 80 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability  TO-220F TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  1 1 1 TO-262 TO-251 1 SYMBOL TO-252  SOP-8 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF630L-TA3-T UF630G-TA3-T UF630L-TF1-T UF630G-TF1-T UF630L-TF2-T UF630G-TF2-T UF630L-TF3-T UF630G-TF3-T UF630L-TM3-T UF630G-TM3-T UF630L-TN3-R UF630G-TN3-R UF630L-T2Q-T UF630G-T2Q-T UF630G-S08-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 TO-262 SOP-8 1 G G G G G G G S 2 D D D D D D D S Pin Assignment 3 4 5 6 S - - S - - S - - S - - S - - S - - S - - S G D D 7 D Packing 8 Tube Tube Tube Tube Tube - Tape Reel Tube D Tape Reel 1 of 8 QW-R502-049.J UF630  Power MOSFET MARKING TO-220 / TO-220F / TO-220F1 TO-220F2 / TO-252 / TO-262 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SOP-8 2 of 8 QW-R502-049.J UF630  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 200 V Drain-Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C) VDGR 200 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 9 A Pulsed Drain Current (Note 2) IDM 36 A Single Pulse Avalanche Energy (Note 3) EAS 150 mJ TO-220/TO-262 73 TO-220F1/ TO-220F 38 Power Dissipation PD W TO-220F2 42 TO-251/ TO-252 46 SOP-8 5 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C  THERMAL DATA PARAMETER TO-220/TO-262 TO-220F1/ TO-220F TO-220F2 Junction to Ambient TO-251/ TO-252 SOP-8 TO-220/TO-262 TO-220F1/ TO-220F Junction to Case TO-220F2 TO-251/ TO-252 SOP-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATING UNIT 62.5 θJA θJC °C/W 100.3 83 1.71 3.31 2.98 2.7 24 °C/W 3 of 8 QW-R502-049.J UF630  Power MOSFET ELECTRICAL SPECIFICATIONS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage On-State Drain Current (Note 1) BVDSS ID(ON) Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS > ID(ON) x RDS(ON)MAX, VGS = 10V VDS = Rated BVDSS, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1.0MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 90V, ID≈9A, RGS = 9.1Ω, Turn-On Rise Time tR VGS = 10V, RL = 9.6Ω Turn-Off Delay Time tD(OFF) (Note 1, 2) Turn-Off Fall Time tF Total Gate Charge QG VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS Gate-Source Charge QGS IG(REF) = 1.5mA Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS =0V, IS = 9.0A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr IS = 9.0A, dIS/dt = 100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%. Notes: 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 200 V 9 A 2 0.25 10 100 -100 μA nA nA 4 0.4 V Ω 600 250 80 19 10 9 450 3 pF pF pF 30 50 50 40 30 ns ns ns ns nC nC nC 2 V 9 A 36 A ns μC 4 of 8 QW-R502-049.J UF630  Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS BVDSS L RG VDS VDD IAS VDD D.U.T. 0 0.01Ω tp tAV IAS Fig1. Unclamped Energy Test Circuit Fig.2 Unclamped Energy Waveforms VDS RL 10% 0 RG VDD VGS 90% D.U.T. 90% VGS 50% 10% 0 tD(ON) tON Fig.3 Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR PULSE WIDTH 50% tD(OFF) tF tOFF Fig.4 Resistive Switching Waveforms 5 of 8 QW-R502-049.J UF630 TYPICAL CHARACTERISTICS Drain Current, ID (A) Power Dissipation, PD  Power MOSFET Forward Bias Safe Operating Area Normalized Transient Thermal Impedance 1.0 0.5 Drain Current, ID (A) Normalized Transient Thermal Impedance, ZθJC 100 0.2 PDM 0.1 0.1 0.05 t1 0.02 t2 0.01 0.01 10-5 Single pulse Duty Factor, D=t1/t2 Peak TJ =PDM×ZθJC RθJC +TC 10-4 10-3 10-2 10-1 1 1ms 10ms Operation in This Area May be Limited by RDS (ON) 1 100ms DC TC=25℃ TJ=Max Rated 1 Rectangular Pulse Duration, t1 (s) 10 100 1000 Drain to Source Voltage, VDS (V) Drain Current, ID (A) Drain Current, ID (A) 100μs 0.1 10 10μs 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-049.J Normalized Drain to Source Breakdown Voltage Normalized Drain to Source on Resistance Drain to Source on Resistance, RDS (ON) Drain Current, ID (A)  Gate to Source Voltage, VGS (V) Source to Drain Current, ISD (A) UF630 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw QW-R502-049.J 7 of 8 UF630 Power MOSFET TYPICAL CHARACTERISTICS (Cont.)  Capacitance vs. Drain to Source Voltage 2000 Drain Current vs. Source to Drain Voltage 40 VGS = 0V, f = 1MHz CISS = CGS + CGD, CDS CRSS = CGD COSS = CDS + CGD 1600 35 30 25 1200 20 800 15 CISS 400 0 10 5 COSS 0 CRSS 1 10 20 30 40 1 50 1 1.5 2 2.5 3 Source to Drain Voltage, VSD (V) Drain to Source Voltage, VDS (V) Drain Current, ID (A) Drain Current, ID (μA) 0.5 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-049.J