UF630L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD UF630 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. MOSFET 1 TO-220 FEATURES * 9A, 200V, Low RDS(ON)(0.4Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance 1 TO-220F *Pb-free plating product number: UF630L SYMBOL 2.Drain 1 .Gate 3.Source ORDERING INFORMATION Order Number Normal Lead Free Plating UF630-TA3-T UF630L-TA3-T UF630-TF3-T UF630L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube UF630L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-049,B UF630 ABSOLUTE MAXIMUM RATINGS (Tc = 25℃, Unless Otherwise Specified) PARAMETER Drain to Source Voltage (TJ =25℃~125℃) Drain to Gate Voltage (RGS = 20kΩ, TJ =25℃~125℃) Gate to Source Voltage Continuous Ta = 100℃ Drain Current SYMBOL VDS VDGR VGS ID RATINGS 200 200 ±20 9 6 MOSFET UNIT V V V A A Pulsed IDM 36 A Maximum Power Dissipation (Ta = 25℃) 75 W PD Derating above 25℃ 0.6 W/℃ Single Pulse Avalanche Energy Rating 150 mJ EAS (VDD=20V, starting TJ =25℃, L=3.37mH, RG=50Ω, peak IAS = 9A) Operation and Storage Temperature TJ, TSTG -40 ~ +150 ℃ Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be functional, but does not guarantee specific performance limits. 2.Absolute maximum ratings indicate limits beyond which damage to the device may occur. ELECTRICAL SPECIFICATIONS (TC =25℃, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 16) Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA On-State Drain Current (Note 1) ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS = 10V VDS = Rated BVDSS, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS=0.8xRated BVDSS,VGS=0V,TJ= 125℃ Gate to Source Leakage Current IGSS VGS = ±20V Drain to Source On Resistance RDS(ON) ID = 5A, VGS = 10V (Figure 14, 15) (Note 1) VDS > ID(ON) x RDS(ON)MAX, ID = 5A Forward Transconductance (Note 1) gFS (Figure 18) Turn-On Delay Time tDLY(ON) VDD = 90V, ID≈9A, RGS = 9.1Ω, VGS = 10V Rise Time tR Turn-Off Delay Time tDLY(OFF) RL = 9.6Ω (Note 2) Fall Time tF Total Gate Charge QG(TOT) VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS Gate to Source Charge QGS Ig(REF) = 1.5mA (Figure 20) (Note 3) Gate to Drain “Miller” Charge QGD Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance COSS (Figure 17) Reverse - Transfer Capacitance CRSS NOTE : 1. Pulse Test: Pulse width≤300µs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. MIN 200 2 9 TYP MAX UNIT V 4 V A 25 µA 250 µA ±100 nA 0.25 3 4.8 30 50 50 40 30 0.85 Ω S ns ns ns ns nC nC nC pF pF pF 19 10 9 600 250 80 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-049,B UF630 INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL MIN Internal Drain Inductance Measured from the contact screw on tab to center of die LD Measured from the drain lead(6mm from package) to center of die Internal Source Inductance LS Measured from the source lead(6mm from header) to source bond pad Remark: Modified MOSFET symbol showing the internal devices inductances as below. D LD G LS S MOSFET TYP 3.5 4.5 7.5 MAX UNIT nH nH nH THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL θJA θJc RATINGS 80 1.67 UNIT ℃/W SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN Source to Drain Diode Voltage TJ = 25℃, ISD = 9.0A, VGS =0V (Figure 19) VSD (Note 1) Continuous Source to Drain Current ISD Note 2 Pulse Source to Drain Current ISDM TJ = 150℃, ISD = 9.0A, dISD/dt = 100A/µs Reverse Recovery Time tRR TJ = 150℃, ISD = 9.0A, dISD/dt = 100A/µs Reverse Recovery Charge QRR NOTE : 1. Pulse Test: Pulse width≤300µs, Duty Cycle≤2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. TYP MAX UNIT 2 8 36 450 3 V A A ns µC D G S UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-049,B UF630 TEST CIRCUITS AND WAVEFORMS VDS MOSFET L VARY tp TO OBTAIN REQUIRED PEAK IAS VGS DUT tp RG + VDD 0V IAS 0.01Ω FIGURE 1. UNCLAMPED ENERGY TEST CIRCUIT BVDSS tp IAS VDS VDD 0 tAV FIGURE 2. UNCLAMPED ENERGY WAVEFORMS RL + DUT RG VDD VGS FIGURE 3. SWITCHING TIME TEST CIRCUIT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-049,B UF630 TEST CIRCUITS AND WAVEFORMS(cont.) tON tDLY(ON) tR VDS 90% tOFF tDLY(OFF) tF 90% MOSFET 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% FIGURE 4. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) 12V BATTERY 0.2μF SAME TYPE AS DUT 50KΩ 0.3μF D DUT G IG (REF) 0 IG C URRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR FIGURE 5. GATE CHARGE TEST CIRCUIT VDD QG(TOT) QGD QGS VGS VDS 0 IG(REF) 0 FIGURE 6. GATE CHARGE WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-049,B UF630 TYPICAL CHARACTERISTICS FIGURE 7. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE MOSFET FIGURE 8. MAXIMUM CONTIONUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 POWER DISSIPATION MULTIPLIER 1.2 DRAIN CURRENT, I D (A) 150 1.0 0.8 0.6 0.4 0.2 0 0 50 100 8 6 4 2 0 25 50 75 100 125 150 CASE TEMPERATURE, TC (℃) CASE TEMPERATURE, TC (℃) FIGURE 9. NORMALIZED TRANSIENT THERMAL IMPEDANCE 100 FIGURE 10. FORWARD BIAS SAFE OPERATING AREA NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z θJC 0.5 0.2 0.1 0.1 0.05 DRAIN CURRENT, I D (A) 1.0 10 10μs 100μs 1ms PDM 0.02 0.01 t1 t2 1 Operation in This Area May be Limited by rDS (on) TC=25℃ TJ=Max Rated 1 10 100 0.01 -5 10 Single pulse Duty Factor, D=t1/t2 Peak TJ =PDM×ZθJC RθJC +T C 10 -4 10ms 100ms DC 10 -3 10 -2 10 -1 1 10 0.1 1000 RECTANGULAR PULSE DURATION, t1 (s) DRAIN TO SOURCE VOLTAGE, VDS (V) FIGURE 11. OUTPUT CHARACTERISTICS 20 D RAIN CURRENT, ID (A) FIGURE 12. SATURATION CHARACTERISTICS 10 DRAIN CURRENT, ID (A) 16 12 8 VGS =10V VGS=8V Pulse Duration=80μs Duty Cycle = 0.5% Max VGS =7V VGS =6V 8 6 4 2 0 Pulse Duration=80μs Duty Cycle = 0.5% Max VGS =10V VGS =9V VGS =8V VGS =7V VGS =6V VGS =5V VGS=5V 4 VGS=4V 0 0 20 40 60 80 100 VGS=4V 0 1 2 3 4 5 DRAIN TO SOURCE VOLTAGE, VDS, (V) DRAIN TO SOURCE VOLTAGE, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-049,B UF630 TYPICAL CHARACTERISTICS (cont.) FIGURE 13. TRANSFER CHARACTERISTICS DRAIN TO SOURCE ON RESISTANCE, R DS (ON) MOSFET FIGURE 14. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 0.8 2μs Pulse Test VGS=10V 0.6 10 DRAIN CURRENT, I D (A) Pulse Duration=80μs Duty Cycle = 0.5% Max 8 VDS>ID(ON)×RDS(ON)MAX 6 4 2 0 125℃ 25℃ -40℃ 0.4 VGS=20V 0.2 0 1 2 3 4 5 6 7 0 0 10 20 30 40 GATE TO SOURCE VOLTAGE , VGS (V) DRAIN CURRENT, ID (A) FIGURE 15. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE N ORMALIZED DRAIN TO SOURCE ON RESISTANCE FIGURE 16. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 2.2 Pulse Duration =80 μs Duty Cycle = 0.5% Max 1.8 VGS =10V, I D=5A 1.4 1 0.6 0.2 1.25 1.15 1.05 0.95 0.85 ID=250μA -40 0 40 80 120 0.75 -40 0 40 80 120 160 JUNCTION TEMPERATURE, TJ (℃) JUNCTION TEMPERATURE, TJ (℃) FIGURE 17. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 2000 CAPACITANCE, C (pF) FIGURE 18. TRANSCONDUCTANCE vs DRAIN CURRENT 10 Pulse Duration=80μs Duty Cycle = 0.5% Max 8 6 4 2 0 -40℃ 25℃ 125℃ 1600 1200 800 400 0 CRSS 1 10 20 CISS COSS 30 30 50 TRANSCONDUCTANCE, gFS (S) VGS = 0V, f = 1MHz CISS = CGS + C GD, CDS CRSS = CGD COSS = CDS + CGD 0 2 4 6 8 10 D RAIN TO SOURCE VOLTAGE, VDS (V) DRAIN CURRENT, I D (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-049,B UF630 TYPICAL CHARACTERISTICS (cont.) FIGURE 19. SOURCE TO DRAIN DIODE VOLTAGE SOURCE TO DRAIN CURRENT, ISD (A) GATE TO SOURCE VOLTAGE, VGS (V) MOSFET FIGURE 20. GATE TO SOURCE VOLTAGE vs GATE CHARGE 20 ID=9A VDS=40V VDS=100V 10 VDS=160V Pulse Duration=80μs 100 Duty Cycle = 0.5% Max 15 10 150℃ 25℃ 5 1 0 1 2 3 4 0 0 8 16 24 32 40 SOURCE TO DRAIN VOLTAGE, VSD (V) GATE CHARGE, QG (nC) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-049,B