UF640L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD UF640 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies. 1 TO-220 MOSFET 1 FEATURES * RDS(ON) =0.18Ω@VGS = 10V. * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness TO-220F *Pb-free plating product number: UF640L SYMBOL 2.Drain 1 .Gate 3.Source ORDERING INFORMATION Order Number Normal Lead Free Plating UF640-TA3-T UF640L-TA3-T UF640-TF3-T UF640L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube UF640L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 Ver.A UF640 ABSOLUTE MAXIMUM RATING (TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ) Gate-Source Voltage SYMBOL VDSS VDGR VGSS MOSFET RATINGS UNIT 200 V 200 V ±20 V TC = 25℃ 18 A Continuous Drain Current ID TC = 100℃ 11 A Pulsed Drain Current (Note 2) IDM 72 A Single Pulse Avalanche Energy Rating (Note 3) EAS 580 mJ Maximum Power Dissipation 125 W PD W/℃ Dissipation Derating Factor 1.0 Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Channel to Ambient Thermal Resistance, Channel to Case SYMBOL θJA θJC MIN TYP MAX 62 1 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current On-State Drain Current Gate-Source Leakage Current Drain-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Gate to Source + Gate to Drain) Gate-Source Charge Gate-Drain “Miller” Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL TEST CONDITIONS BVDSS ID = 250µA, VGS = 0V VGS(THR) VGS = VDS, ID = 250µA VDS = Rated BVDSS, VGS = 0V IDSS VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125℃ ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS = 10V IGSS VGS = ±20V RDS(ON) ID = 10A, VGS = 10V gFS VDS ≥ 10V, ID = 11A CISS COSS VDS = 25V, VGS = 0V, f = 1MHz CRSS VGS = 10V, ID ≈ 18A, VDS = 0.8 x QG(TOT) Rated BVDSS Gate Charge is Essentially Independent of QGS Operating Temperature IG(REF) = QGD 1.5mA tD(ON) VDD = 100V, ID ≈ 18A, RGS = 9.1Ω, RL = 5.4Ω, tR t D(OFF) MOSFET Switching Times are Essentially Independent of tF Operating Temperature MIN 200 2 TYP MAX UNIT V 4 V 25 µA 250 18 0.14 10 1275 400 100 43 8 22 13 50 46 35 21 77 68 54 ±100 0.18 µA A nA Ω S pF pF pF nC nC nC ns ns ns ns 6.7 64 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 Ver.A UF640 ELECTRICAL CHARACTERISTICS(Cont.) TEST CONDITIONS MIN Measured From the Contact Screw on Tab to Center of Die Modified MOSFET Symbol Internal Drain Inductance LD Showing the Internal Measured From the Drain Devices Inductances Lead, 6mm D (0.25in) From Package to LD Center of Die G Measured LS From the S Source Lead, 6mm (0.25in) Internal Source Inductance LS from Header to Source Bonding Pad SOURCE TO DRAIN DIODE SPECIFICATIONS Diode Forward Voltage (Note 1) VSD TJ = 25℃, IS = 18A, VGS = 0V, Continuous Source Current (body Integral Reverse p-n Junction IS diode) Diode in the MOSFET Drain PARAMETER SYMBOL TYP MOSFET MAX UNIT 3.5 nH 4.5 nH 7.5 nH 2.0 18 V A Pulse Source Current (body diode) (Note 1) ISM G ate Sourse 72 A TJ = 25℃, IS = 18A, 120 240 530 ns Reverse Recovery Time tRR dIS/dt = 100A/µs TJ = 25℃, IS = 18A, 1.3 2.8 5.6 µC Reverse Recovery Charge QRR dIS/dt = 100A/µs Note 1. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. 3. L = 3.37mH, VDD = 50V, RG = 25Ω, peak IAS = 18A, starting TJ = 25℃. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 Ver.A UF640 TEST CIRCUIT VDS L BVDSS MOSFET RG D.U.T. VDD IAS VDS VDD 0.01Ω IAS Figure 1A. Unclamped Energy Test Circuit 0 tp tAV Figure 1B. Unclamped Energy Waveforms VDS RL 90% 10% 90% RG VDD VGS D.U.T. 0 VGS 10% 0 50% PULSE WIDTH 50% tD(ON) tON Figure 2A. Switching Time Test Circuit tR t D(OFF) t F t OFF Figure 2B. Resistive Switching Waveforms CURRENT REGULATOR 12V BATTERY 50kΩ 0.2µF 0.3µF D VDS (ISOLATED SUPPLY) SAME TYPE AS DUT VDD Q G(TOT) QGS Q GD VGS VDS G 0 IG(REF) IG CURRENT SAMPLING RESISTOR S I D CURRENT SAMPLING RESISTOR D UT 0 IG(REF) 0 Figure 3A. Gate Charge Test Circuit Figure 3B. Gate Charge Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 Ver.A UF640 TYPICAL CHARACTERISTICS Saturation Characteristics 30 24 Drain Current, ID (A) MOSFET 18 12 6 0 0 Drain to Source on Resistance R DS(ON) (Ω) Pulse Duration = 80 µs Duty Cycle = 0.5% MAX Drain to Source On Resistance vs. Gate Voltage And Drain Current 1.5 Pulse Duration = 80µs Duty Cycle = 0.5% Max 1.2 0.8 0.6 VGS =10V 0.3 0 VGS =6V 1.0 2.0 5.0 3.0 4.0 Drain to Source Voltage, VDS (V) 0 45 60 15 30 Drain Current, ID (A) 75 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 Ver.A