UF740L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1  1 1 TO-220F1 TO-220F2 FEATURES * 10A, 400V, R DS(ON) (0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance  TO-220F TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  1 1 TO-263 SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF740L-TA3-T UF740G-TA3-T UF740L-TF1-T UF740G-TF1-T UF740L-TF2-T UF740G-TF2-T UF740L-TF3-T UF740G-TF3-T UF740L-TQ2-T UF740G-TQ2-T UF740L-TQ2-R UF740G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel (1) R: Tape Reel, T: Tube UF740L-TA3-T (1)Packing Type (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2, (2)Package Type (2) TF3: TO-220F, TQ2: TO-263 (3)Lead Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-078. G UF740  Power MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 25°C, Unless Otherwise Specified) PARAMETER SYMBOL RATINGS Drain to Source Voltage (T J =25°C~125°C) V DS 400 Drain to Gate Voltage (R GS = 20kΩ) (T J =25°C~125°C) V DGR 400 Gate to Source Voltage V GS ±20 Continuous ID 10 Drain Current T C = 100°C ID 6.3 Pulsed I DM 40 Avalanche Energy Single Pulsed (Note 3) E AS 520 TO-220/TO-263 125 Power Dissipation TO-220F/TO-220F1 44 TO-220F2 46 PD TO-220/TO-263 1.0 Derating above 25°C TO-220F/TO-220F1 0.35 TO-220F2 0.37 Junction Temperature TJ +150 Operating Temperature T OPR -55 ~ +150 Storage Temperature T STG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  UNIT V V V A A A mJ W W/°C °C °C °C THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220/TO-263 TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θ JA θ Jc RATINGS 62.5 1.0 2.86 2.72 UNIT °C/W °C/W 2 of 6 QW-R502-078. G UF740  Power MOSFET ELECTRICAL CHARACTERISTICS (T C =25°C, Unless Otherwise Specified.) PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage On-State Drain Current (Note 1) Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge Input Capacitance Output Capacitance Reverse - Transfer Capacitance SYMBOL TEST CONDITIONS BV DSS V GS = 0V, I D = 250μA V GS(THR) V GS = V DS , I D = 250μA I D(ON) V DS >I D(ON) x R DS(ON)MAX , V GS =10V V DS = Rated BV DSS , V GS = 0V I DSS V DS =0.8 x Rated BV DSS , V GS =0V,T J =125°C I GSS V GS = ±20V R DS(ON) V GS = 10V, I D = 5.2A (Note 1) g FS V DS ≥ 50V, I D = 5.2A (Note 1) t DLY(ON) V DD = 200V, I D ≈ 10A, tR R GS = 9.1Ω, R L = 20Ω, V GS = 10V t DLY(OFF) MOSFET Switching Times are Essentially Independent of Operating Temperature tF Q G(TOT) Q GS Q GD C ISS C OSS C RSS MIN TYP MAX UNIT 400 V 2.0 4.0 V 10 A 25 μA 5.8 V GS = 10V, I D = 10A, I G(REF) = 1.5mA, V DS = 0.8 x Rated BV DSS Gate Charge is Essentially Independent of Operating Temperature V GS = 0V, V DS =25V, f = 1.0MHz Measured From Modified MOSFET the Contact Screw Symbol Showing the on Tab to Center Internal Devices Inductances of Die Internal Drain Inductance LD Measured From D the Drain Lead, 6mm (0.25in) LD From Package to Center of Die G Measured From LS the Source Lead, 6mm (0.25in) S Internal Source Inductance LS From Header to Source Bonding Pad SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage V SD T J = 25°C, I SD = 10A, V GS = 0V (Note 1) D Continuous Source to Drain Current IS Modified MOSFET Symbol Showing the Integral Pulse Source to Drain Current Reverse P-N G I SM (Note 2) Junction Diode 250 μA ±500 0.38 0.55 8.9 65 75 130 145 240 260 145 155 nA Ω S ns ns ns ns 138 nC 35 35 1170 160 26 nC nC pF pF pF 3.5 nH 4.5 nH 7.5 nH 2.0 10 V A 40 A 790 8.2 ns μC S Reverse Recovery Time t rr T J = 25°C, I SD = 10A, dI SD /dt = 100A/μs Reverse Recovery Charge Q RR T J = 25°C, I SD = 10A, dI SD /dt = 100A/μs Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%. 2. Repetitive rating: Pulse width limited by maximum junction temperature. 3. V DD =50V, starting T J =25°C, L=9.1mH, R G =25Ω, peak I AS = 10A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 170 1.6 390 4.5 3 of 6 QW-R502-078. G UF740  Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS BVDSS L RG VDS VDD IAS VDD D.U.T. 0 0.01Ω tp tAV IAS Unclamped Energy Test Circuit Unclamped Energy Waveforms VDS 90% RL 10% 0 RG 90% VDD VGS D.U.T. VGS 50% 10% 0 50% PULSE WIDTH tR tD(ON) tD(OFF) tF tOFF tON Resistive Switching Waveforms Switching Time Test Circuit VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY VDD SAME TYPE AS DUT 50kΩ QG(TOT) QGS 0.3µF 0.2µF QGD VGS D VDS DUT G IG(REF) 0 0 S IG(REF) IG CURRENT SAMPLING RESISTOR ID CURRENT SAMPLING RESISTOR Gate Charge Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 Gate Charge Waveforms 4 of 6 QW-R502-078. G UF740  Power MOSFET TYPICAL PERFORMANCE CUVES Output Characteristics Forward Bias Safe Operating Area 100 15 OPERATION IN THIS REGION IS LIMITED BY RDS(ON) 1 0.1 10ms DC TC=25℃ TJ=MAX RATED SINGLE PULSE 1 Drain Current, ID (A) VGS = 5.5V 9 VGS = 5.0V 6 VGS = 4.5V 3 VGS = 4.0V 102 10 0 103 40 80 Drain to Source Voltage, VDS (V) Saturation Characteristics Transfer Characteristics VGS=10V 12 100 VGS=6.0V VGS=5.5V 9 VGS=5.0V 6 VGS=4.5V 3 VGS=4.0V 0 4 2 8 6 10 200 160 120 Drain to Source Voltage, VDS (V) DUTY CYCLE = 0.5% MAX PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VDS≥50V 10 TJ = 25℃ TJ = 150℃ 1 0.1 0 4 2 6 8 10 Drain to Source Voltage, VDS (V) Gate to Source Voltage, VSD (V) Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Capacitance vs. Drain to Source Voltage 1.25 2500 ID=250μA 1.15 Capacitance, C (pF) Normalized Drain to Source Breakdown Voltage 12 0 15 PULSE DURATION=80μS 0 Drain Current, ID (A) 1ms Drain to Source Current, IDS (ON) (A) Drain Current, ID (A) 100μs 10 PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 6.0V 10μs 1.05 0.95 0.85 0.75 2000 1500 0 20 40 60 80 100 120 140 160 Junction Temperature, TJ (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw CISS 1000 COSS CRSS 500 0 -60 -40 -20 VGS=0V, f=1MHz CISS=CGS+CGD CRSS=CGD COSS≈CDS+CGD 1 2 5 10 2 5 102 2 5 103 Drain to Source Voltage, VDS (V) 5 of 6 QW-R502-078. G UF740 Power MOSFET TYPICAL PERFORMANCE CUVES (Cont.)  Source to Drain Diode Voltage Transconduce vs. Drain Current 100 PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX Source to Drain Current, ISD (A) Transconductance, gFS (S) 15 12 TJ = 25℃ 9 TJ = 150℃ 6 3 10 TJ = 150℃ TJ = 25℃ 1.0 0.1 0 0 4 8 12 Drain Current, ID (A) 16 0 20 Drain to Source on Resistance vs. Voltage and Drain Current 5 4 VGS=10V 2 VGS=20V 1 0 25 10 20 0.6 1.2 0.9 1.5 Gate to Source Voltage vs. Gate Charge 20 Pulse Duration=80μs Duty Cycle = 0.5% Max 3 0.3 Source to Drain Voltage, VSD (V) Gate to Source Voltage, VGS (V) Drain to Source on Resistance, RDS (ON) (Ω) PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX 30 40 50 Drain Current, ID (A) ID=10A 16 VDS=80V 12 VDS=200V 8 VDS=320V 4 0 0 12 36 24 Gate Charge, QG (nC) 48 60 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-078. G